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DCR1006SN2828

Description
Silicon Controlled Rectifier, 820000mA I(T), 2700V V(DRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size418KB,4 Pages
ManufacturerMarconi Circuit Technology Inc
Download Datasheet Parametric Compare View All

DCR1006SN2828 Overview

Silicon Controlled Rectifier, 820000mA I(T), 2700V V(DRM)

DCR1006SN2828 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Nominal circuit commutation break time350 µs
Critical rise rate of minimum off-state voltage300 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3.5 V
Maximum leakage current50 mA
On-state non-repetitive peak current16400 A
Maximum on-state voltage1.87 V
Maximum on-state current820000 A
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Off-state repetitive peak voltage2700 V
surface mountNO
Trigger device typeSCR
Base Number Matches1

DCR1006SN2828 Related Products

DCR1006SN2828 DCR1006SN2626
Description Silicon Controlled Rectifier, 820000mA I(T), 2700V V(DRM) Silicon Controlled Rectifier, 820000mA I(T), 2500V V(DRM)
Reach Compliance Code unknown unknown
Nominal circuit commutation break time 350 µs 350 µs
Critical rise rate of minimum off-state voltage 300 V/us 300 V/us
Maximum DC gate trigger current 200 mA 200 mA
Maximum DC gate trigger voltage 3.5 V 3.5 V
Maximum leakage current 50 mA 50 mA
On-state non-repetitive peak current 16400 A 16400 A
Maximum on-state voltage 1.87 V 1.87 V
Maximum on-state current 820000 A 820000 A
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C
Off-state repetitive peak voltage 2700 V 2500 V
surface mount NO NO
Trigger device type SCR SCR
Base Number Matches 1 1
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