TetraFET
D1203UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
B
C
1
2
D
E
4
M
3
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
30W – 12.5V – 500MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
F
G
H
K
I
J
• SUITABLE FOR BROAD BAND APPLICATIONS
DRAIN
GATE
DM
PIN 1
PIN 3
SOURCE
SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
M
mm
24.76
18.42
45°
6.35
3.17 Dia
5.71
12.7 Dia
6.60
0.13
4.32
3.17
26.16
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
PIN 2
PIN 4
Inches
0.975
0.725
45°
0.25
0.125 Dia
0.225
0.500 Dia
0.260
0.005
0.170
0.125
1.03
• LOW C
rss
• USEFUL P
O
AT 1GHz
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
APPLICATIONS
•
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
117W
40V
±20V
30A
–65 to 150°C
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3169
Issue 1
D1203UK
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BV
DSS
I
DSS
I
GSS
g
fs
G
PS
η
C
iss
C
oss
C
rss
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0
V
DS
= 12.5V
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 30W
V
DS
= 12.5V
f = 500MHz
V
DS
= 0
V
GS
= –5V f = 1MHz
f = 1MHz
f = 1MHz
V
DS
= 12.5V V
GS
= 0
V
DS
= 12.5V V
GS
= 0
I
DQ
= 0.6A
I
D
= 100mA
V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 3A
1
2.4
10
50
20:1
40
Typ.
Max. Unit
V
1
1
7
mA
µA
V
S
dB
%
—
180
120
12
pF
pF
pF
V
GS(th)
Gate Threshold Voltage*
VSWR Load Mismatch Tolerance
* Pulse Test:
Pulse Duration = 300
µs
, Duty Cycle
≤
2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case
Max. 1.5°C / W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3169
Issue 1
Test/Measurement
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