TetraFET
D1212UK
ROHS COMPLIANT
METAL GATE RF SILICON FET
MECHANICAL DATA
B
(4 pls)
C
G
(typ)
2
1
A
D
3
E
5
I
F
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
60W – 12.5V – 175MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
N
M
H
J
K
• SUITABLE FOR BROAD BAND APPLICATIONS
DRAIN 1
GATE 2
DH
PIN 1
PIN 3
PIN 5
SOURCE (COMMON)
DRAIN 2
GATE 1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
13.97
5.72
45°
9.78
1.65R
23.75
1.52R
30.48
19.17
0.13
2.54
1.52
5.08
Tol.
0.26
0.13
5°
0.13
0.13
0.13
0.13
0.13
0.26
0.02
0.13
0.13
0.50
Inches
0.550
0.225
45°
0.385
0.065R
0.935
0.060R
1.200
0.755
0.005
0.100
0.060
0.200
Tol.
0.010
0.005
5°
0.005
0.005
0.005
0.005
0.005
0.010
0.001
0.005
0.005
0.020
PIN 2
PIN 4
• LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
•
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current*
Storage Temperature
Maximum Operating Junction Temperature
290W
40V
±20V
30A
–65 to 150°C
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Document Numbe 3173
Issue 2
D1212UK
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
PER SIDE
BV
DSS
I
DSS
I
GSS
g
fs
G
PS
η
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
V
GS
= 0
V
DS
= 12.5V
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 60W
V
DS
= 12.5V
f = 175MHz
I
DQ
= 2.4A
I
D
= 100mA
V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 3A
1
2.4
10
50
20:1
V
GS
= –5V f = 1MHz
f = 1MHz
f = 1MHz
40
Typ.
Max. Unit
V
1
1
7
mA
µA
V
mhos
dB
%
—
180
120
12
pF
pF
pF
V
GS(th)
Gate Threshold Voltage*
TOTAL DEVICE
VSWR Load Mismatch Tolerance
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
PER SIDE
V
DS
= 0V
V
DS
= 12.5V V
GS
= 0
V
DS
= 12.5V V
GS
= 0
* Pulse Test:
Pulse Duration = 300
µs
, Duty Cycle
≤
2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case
Max. 0.6°C / W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Document Numbe 3173
Issue 2
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