D2224UKG4 datasheet, PDF - EEWORLD Datasheet

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D2224UKG4: DescriptionRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8; CategoryDiscrete semiconductor The transistor; File Size30KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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D2224UKG4 Overview

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8

D2224UKG4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	ROHS COMPLIANT, SOP-8
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Configuration	SINGLE
Minimum drain-source breakdown voltage	40 V
Maximum drain current (ID)	8 A
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-XDSO-G8
JESD-609 code	e4
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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TetraFET

D2224UK

ROHS COMPLIANT

METAL GATE RF SILICON FET

MECHANICAL DATA

Dimensions in mm.

A

N

8

D

1

2

C

B

P

7

6

5

3

4

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

5W – 7.2V – 850MHz

SINGLE ENDED

FEATURES

H

K

L

J

E

F

G

M

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND

APPLICATIONS

• VERY LOW C

rss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN

SO8 PACKAGE

PIN 1 – SOURCE

PIN 2 – DRAIN

PIN 3 – DRAIN

PIN 4 – SOURCE

Dim.

A

B

C

D

E

F

G

H

J

K

L

M

N

P

mm

4.06

5.08

1.27

0.51

3.56

4.06

1.65

0.76

0.51

1.02

45°

0°

7°

0.20

2.18

4.57

Tol.

±0.08

+0.25

-0.00

Min.

Max.

Min.

Max.

±0.08

Max.

±0.08

PIN 5 – SOURCE

PIN 6 – GATE

PIN 7 – GATE

PIN 8 – SOURCE

Inches

0.160

0.200

0.050

0.020

0.140

0.160

0.065

0.030

0.020

0.040

45°

0°

7°

0.008

0.086

0.180

Tol.

±0.003

+0.010

-0.000

Min.

Max.

Min.

Max.

±0.003

Max.

±0.003

APPLICATIONS

•

HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 1 GHz

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25°C unless otherwise stated)

P

D

BV

DSS

BV

GSS

I

D(sat)

T

stg

T

j

Semelab plc.

Power Dissipation

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

Storage Temperature

Maximum Operating Junction Temperature

Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.

Website

http://www.semelab.co.uk

E-mail:

sales@semelab.co.uk

29W

40V

±20V

8A

–65 to 150°C

200°C

Prelim. 5/99

D2224UKG4 Related Products

	D2224UKG4	D2224UK
Description	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOP-8
Is it Rohs certified?	conform to	conform to
package instruction	ROHS COMPLIANT, SOP-8	SOP-8
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	40 V	40 V
Maximum drain current (ID)	8 A	8 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-XDSO-G8	R-XDSO-G8
JESD-609 code	e4	e4
Number of components	1	1
Number of terminals	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	GOLD	GOLD
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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