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D1007UKG4

Description
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, DK, 5 PIN
CategoryDiscrete semiconductor    The transistor   
File Size89KB,5 Pages
ManufacturerSEMELAB
Environmental Compliance  
Download Datasheet Parametric Compare View All

D1007UKG4 Overview

2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, DK, 5 PIN

D1007UKG4 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionFLANGE MOUNT, R-CDFM-F4
Contacts5
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationCOMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage70 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F4
JESD-609 codee4
Number of components2
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
TetraFET
D1007UK
ROHS COMPLIANT
METAL GATE RF SILICON FET
MECHANICAL DATA
A
K
D
5
4
B
(2 pls)
E
C
1
2
3
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
40W – 28V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
G (4 pls)
F
O
H
J
I
M
N
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C
rss
• USEFUL P
O
at 1 GHz
• LOW NOISE
DK
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
DRAIN 2
GATE 1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.45
1.65R
45°
16.51
6.47
18.41
1.52
4.82
24.76
1.52
0.81R
0.13
2.16
Tol.
0.13
0.13
0.76
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.02
0.13
Inches
0.254
0.065R
45°
0.650
0.255
0.725
0.060
0.190
0.975
0.060
0.032R
0.005
0.085
Tol.
0.005
0.005
0.03
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.001
0.005
PIN 4
DRAIN 1
GATE 2
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
100W
70V
±20V
5A
–65 to 150°C
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and
package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Document Number 6219
Issue 1

D1007UKG4 Related Products

D1007UKG4
Description 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, DK, 5 PIN
Is it lead-free? Lead free
Is it Rohs certified? conform to
package instruction FLANGE MOUNT, R-CDFM-F4
Contacts 5
Reach Compliance Code compliant
ECCN code EAR99
Other features LOW NOISE
Shell connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage 70 V
FET technology METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND
JESD-30 code R-CDFM-F4
JESD-609 code e4
Number of components 2
Number of terminals 4
Operating mode ENHANCEMENT MODE
Maximum operating temperature 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR
Package form FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Certification status Not Qualified
surface mount YES
Terminal surface GOLD
Terminal form FLAT
Terminal location DUAL
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications AMPLIFIER
Transistor component materials SILICON
Base Number Matches 1

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