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DRAF113Z0L

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE, ML3-N4-B, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size253KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DRAF113Z0L Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE, ML3-N4-B, 3 PIN

DRAF113Z0L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionCHIP CARRIER, R-XBCC-N3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 10
Shell connectionCOLLECTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JESD-30 codeR-XBCC-N3
Number of components1
Number of terminals3
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.1 W
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
DRAF113Z
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRCF113Z
DRA3113Z in ML3 type package
Features
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, mount area reduction
Eco-friendly Halogen-free package
Package
Code
ML3-N4-B
Package dimension clicks here.→
Click!
Packaging
DRAF113Z0L Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
*
Junction temperature
Storage temperature
Note) *: Copper plate at the collector is 5.0
mm
2
Name
Pin
1: Base
2: Emitter
3: Collector
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
–50
–50
–100
100
150
–55 to +150
Unit
V
V
mA
mW
°C
°C
Marking Symbol: L1
Internal Connection
B
R
1
R
2
C
E
on substrate at 10 mm
×
12 mm
×
0.8 mm.
Resistance value
R
1
R
2
1
10
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Resistance ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
I(on)
V
I(off)
R
1
R
1
/ R
2
Conditions
I
C
= –10 µA, I
E
= 0
I
C
= –2 mA, I
B
= 0
V
CB
= –50 V, I
E
= 0
V
CE
= –50 V, I
B
= 0
V
EB
= –6 V, I
C
= 0
V
CE
= –10 V, I
C
= –5 mA
I
C
= –10 mA, I
B
= – 0.5 mA
V
CE
= – 0.2 V, I
C
= –5 mA
V
CE
= –5 V, I
C
= –100 µA
–30%
0.08
1
0.10
–1.0
– 0.4
+30%
0.12
30
– 0.25
Min
–50
–50
– 0.1
– 0.5
–1.5
Typ
Max
Unit
V
V
µA
µA
mA
V
V
V
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2012
Ver. AED
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