This product complies with the RoHS Directive (EU 2002/95/EC).
DME20101
Silicon PNP epitaxial planar type (Tr1)
Silicon NPN epitaxial planar type (Tr2)
For general amplification
Features
High forward current transfer ratio h
FE
with excellent linearity
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
Mini5-G3-B
Name
Pin
1: Base (Tr1)
2: Emitter (Common)
3: Base (Tr2)
Basic Part Number
DSA2001 + DSC2001 (Common emitter)
4: Collector (Tr2)
5: Collector (Tr1)
Marking Symbol: A2
Internal Connection
(C1)
5
(C2)
4
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Tr1
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Tr2
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Rating
–60
–50
–7
–100
–200
60
50
7
100
200
300
150
–55 to +150
Unit
V
V
V
mA
mA
V
V
V
mA
mA
mW
°C
°C
Tr1
Tr2
1
(B1)
2
(E)
3
(B2)
Publication date: March 2010
ZJJ00574BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DME20101
Electrical Characteristics
T
a
= 25°C±3°C
Tr1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= –10 µA, I
E
= 0
I
C
= –2 mA, I
B
= 0
I
E
= –10 µA, I
C
= 0
V
CB
= –20 V, I
E
= 0
V
CE
= –10 V, I
B
= 0
V
CE
= –10 V, I
C
= –2 mA
I
C
= –100 mA, I
B
= –10 mA
V
CE
= –10 V, I
C
= –2 mA
V
CB
= –10 V, I
E
= 0, f = 1 MHz
210
– 0.2
150
2
Min
–60
–50
–7
– 0.1
–100
460
– 0.5
Typ
Max
Unit
V
V
V
µA
µA
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Tr2
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Common characteristics chart
P
T
T
a
400
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 10 µA, I
E
= 0
I
C
= 2 mA, I
B
= 0
I
E
= 10 µA, I
C
= 0
V
CB
= 20 V, I
E
= 0
V
CE
= 10 V, I
B
= 0
V
CE
= 10 V, I
C
= 2 mA
I
C
= 100 mA, I
B
= 10 mA
V
CE
= 10 V, I
C
= 2 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Min
60
50
7
Typ
Max
Unit
V
V
V
0.1
100
210
0.13
150
1.5
460
0.3
µA
µA
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
DME20101_PT-Ta
Total power dissipation P
T
(mW)
300
200
100
0
0
40
80
120
160
200
Ambient temperature T
a
(°C)
2
ZJJ00574BED
This product complies with the RoHS Directive (EU 2002/95/EC).
DME20101
Characteristics charts of Tr1
DME20101(Tr1)_IC-VCE
I
C
V
CE
−120
T
a
=
25°C
−100
I
B
= −600 µA
−500 µA
−400 µA
−300 µA
−200 µA
−100 µA
−20
0
600
DME20101(Tr1)_hFE-IC
DME20101(Tr1)_VCEsat-IC
h
FE
I
C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
I
C
/ I
B
= 10
V
CE
= −10
V
Forward current transfer ratio h
FE
500
400
300
200
100
0
−
0.1
Collector current I
C
(mA)
−80
−60
−40
T
a
=
85°C
25°C
−30°C
−1
−
0.1
T
a
=
85°C
25°C
−30°C
0
−2
−4
−6
−8
−10
−12
−1
−10
−100
−
0.01
−
0.1
−1
−10
−100
Collector-emitter voltage V
CE
(V)
DME20101(Tr1)_IC-VBE
Collector current I
C
(mA)
DME20101(Tr1)_Cob-VCB
Collector current I
C
(mA)
DME20101(Tr1)_fT-IC
I
C
V
BE
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
−120
V
CE
= −10
V
−100
25°C
4.0
C
ob
V
CB
I
E
= 0
f = 1 MHz
T
a
= 25°C
250
f
T
I
C
V
CE
=
−10
V
T
a
=
25°C
Transition frequency f
T
(MHz)
Collector current I
C
(mA)
T
a
=
85°C
−80
−60
−40
−20
0
−30°C
200
3.0
150
2.0
100
1.0
50
0
−
0.4
−
0.8
−1.2
0
−1
−10
−100
0
−
0.1
−1
−10
−100
Base-emitter voltage V
BE
(V)
Collector-base voltage V
CB
(V)
Collector current I
C
(mA)
Characteristics charts of Tr2
DME20101(Tr2)_IC-VCE
I
C
V
CE
120
T
a
=
25°C
600
DME20101(Tr2)_hFE-IC
h
FE
I
C
DME20101(Tr2)_VCEsat-IC
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
V
CE
=
10 V
I
C
/ I
B
= 10
Forward current transfer ratio h
FE
100
500
400
300
200
100
0
0.1
T
a
=
85°C
Collector current I
C
(mA)
80
60
40
20
0
I
B
=
250
µA
200
µA
150
µA
100
µA
50
µA
1
25°C
−30°C
0.1
T
a
=
85°C
−30°C
25°C
1
10
100
0
2
4
6
8
10
12
1
10
100
0.01
0.1
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
ZJJ00574BED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
DME20101
DME20101(Tr2)_IC-VBE
DME20101(Tr2)_Cob-VCB
DME20101(Tr2)_fT-IC
I
C
V
BE
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
120
V
CE
=
10 V
100
25°C
4.0
C
ob
V
CB
250
V
CE
= 10 V
T
a
=
25°C
200
f
T
I
C
T
a
=
85°C
80
60
40
20
0
−30°C
3.0
Transition frequency f
T
(MHz)
1
10
100
Collector current I
C
(mA)
150
2.0
100
1.0
50
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0
0.1
1
10
100
Base-emitter voltage V
BE
(V)
Collector-base voltage V
CB
(V)
Collector current I
C
(mA)
4
ZJJ00574BED
This product complies with the RoHS Directive (EU 2002/95/EC).
DME20101
Mini5-G3-B
Unit: mm
0.30
+0.10
−0.05
(0.65)
0.13
+0.05
−0.02
5
4
+0.25
−0.05
1.50
2.8
−0.3
+0.2
1
2
3
(0.95)
(0.95)
1.9
±0.1
2.90
+0.20
−0.05
8
°
+0.2
1.1
−0.1
0 to 0.1
1.1
−0.1
+0.3
0.4
±0.2
6
°
ZJJ00574BED
5
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