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Datasheet> All Categories > Analog mixed-signal IC> Trigger device> DT380N14KOF
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DT380N14KOF

Description
Silicon Controlled Rectifier, 800A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element,
CategoryAnalog mixed-signal IC    Trigger device   
File Size184KB，4 Pages
ManufacturerEUPEC [eupec GmbH]
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DT380N14KOF Overview

Silicon Controlled Rectifier, 800A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element,

DT380N14KOF Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
ConfigurationSINGLE WITH BUILT-IN SERIES DIODE
Maximum DC gate trigger current250 mA
JESD-30 codeR-XUFM-X7
Number of components1
Number of terminals7
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current800 A
Off-state repetitive peak voltage1400 V
Repeated peak reverse voltage1400 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Trigger device typeSCR
Base Number Matches1

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Technische Information / Technical Information
Netz-Thyristor-Modul
Phase Control Thyristor Module
TT 380 N 12...18
T
vj
= - 40°C...T
vj max
N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse currents
Zündverzug
gate controlled delay time
Freiwerdezeit
circuit commutated turn-off time
T
vj
= T
vj max
, i
T
= 1500A
T
C
= 85°C
V
DRM
, V
RRM
V
DSM
V
RSM
I
TRMSM
I
TAVM
I
TSM
I²t
(di
T
/dt)
cr
(dv
D
/dt)
cr
1200, 1400
1600, 1800
1200, 1400
1600, 1800
1300, 1500
1700, 1900
800
380
13000
11000
845000
605000
120
V
V
V
V
V
V
A
A
A
A
A²s
A²s
A/µs
T
vj
= - 40°C...T
vj max
T
vj
= + 25°C...T
vj max
T
vj
= 25°C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
T
vj
= 25°C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
DIN IEC 747-6
f = 50Hz, i
GM
= 1A, di
G
/dt = 1A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
6. Kennbuchstabe / 6th letter F
1000
V/µs
v
T
V
(TO)
r
T
I
GT
V
GT
I
GD
V
GD
I
H
I
L
i
D
, i
R
t
gd
t
q
max.
1,72
1,0
0,38
V
V
mΩ
mA
V
mA
mA
V
mA
mA
mA
µs
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= 25°C, v
D
= 6V
max.
max.
max.
max.
max.
max.
max.
max.
max.
250
1,5
10
5
0,2
300
1500
80
4,0
T
vj
= 25°C, v
D
= 6V
T
vj
= T
vj max
, v
D
= 6V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 6V, R
A
= 5Ω
T
vj
= 25°C, v
D
= 6V, R
GK
≥
10Ω
i
GM
= 1A, di
G
/dt = 1A/µs, t
G
= 20µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6
T
vj
= 25°C, i
GM
= 1A, di
G
/dt = 1A/µs
T
vj
= T
vj max
, i
TM
= 350A
v
RM
= 100V, V
DM
= 0,67 V
DRM
dv
D
/dt = 20V/µs, -di
T
/dt = 10A/µs
5. Kennbuchstabe / 5th letter O
typ.
V
ISOL
250
3,0
3,6
µs
kV
kV
Isolations-Prüfspannung
insulation test voltage
SZ M ; K.-A. Rüther
04. Dez 95
RMS, f = 50Hz, t = 1min
RMS, f = 50Hz, t = 1sec
A 122/97
Seite/page 1(4)

DT380N14KOF Related Products

DT380N14KOF DT380N12KOF DT380N16KOF DT380N18KOF TD380N12KOF TD380N14KOF TD380N16KOF
Description Silicon Controlled Rectifier, 800A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, Silicon Controlled Rectifier, 800A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, Silicon Controlled Rectifier, 800A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, Silicon Controlled Rectifier, 800A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element, Silicon Controlled Rectifier, 800A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, Silicon Controlled Rectifier, 800A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, Silicon Controlled Rectifier, 800A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element,
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
Configuration SINGLE WITH BUILT-IN SERIES DIODE SINGLE WITH BUILT-IN SERIES DIODE SINGLE WITH BUILT-IN SERIES DIODE SINGLE WITH BUILT-IN SERIES DIODE SINGLE WITH BUILT-IN SERIES DIODE SINGLE WITH BUILT-IN SERIES DIODE SINGLE WITH BUILT-IN SERIES DIODE
Maximum DC gate trigger current 250 mA 250 mA 250 mA 250 mA 250 mA 250 mA 250 mA
JESD-30 code R-XUFM-X7 R-XUFM-X7 R-XUFM-X7 R-XUFM-X7 R-XUFM-X7 R-XUFM-X7 R-XUFM-X7
Number of components 1 1 1 1 1 1 1
Number of terminals 7 7 7 7 7 7 7
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 800 A 800 A 800 A 800 A 800 A 800 A 800 A
Off-state repetitive peak voltage 1400 V 1200 V 1600 V 1800 V 1200 V 1400 V 1600 V
Repeated peak reverse voltage 1400 V 1200 V 1600 V 1800 V 1200 V 1400 V 1600 V
surface mount NO NO NO NO NO NO NO
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER UPPER
Trigger device type SCR SCR SCR SCR SCR SCR SCR
Base Number Matches 1 1 1 1 - - -

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