AUGUST 1995
DS1101SG
DS4166-2.3
DS1101SG
RECTIFIER DIODE
APPLICATIONS
s
Rectification.
s
Freewheel Diode.
s
DC Motor Control.
s
Power Supplies.
s
Welding.
s
Battery Chargers.
KEY PARAMETERS
V
RRM
I
F(AV)
I
FSM
1800V
1730A
31250A
FEATURES
s
Double Side Cooling.
s
High Surge Capability.
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
Conditions
DS1101SG18
1800
DS1101SG17
1700
DS1101SG16
1600
DS1101SG15
1500
DS1101SG14
1400
DS1101SG13
1300
Lower voltage grades available.
V
RSM
= V
RRM
+ 100V
Outline type code: G. Turn to page 7 for further information.
CURRENT RATINGS
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 100
o
C
T
case
= 100
o
C
T
case
= 100
o
C
1730
2715
2250
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 100
o
C
T
case
= 100
o
C
T
case
= 100
o
C
1040
1630
1260
A
A
A
1/8
DS1101SG
SURGE RATINGS
Symbol
I
FSM
I
2
t
I
FSM
I
2
t
Parameter
Surge (non-repetitive) forward current
I
2
t for fusing
Surge (non-repetitive) forward current
I
2
t for fusing
Conditions
10ms half sine; T
case
= 175
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
=175
o
C
V
R
= 0
Max.
25.0
3.12 x 10
6
31.25
4.88 x 10
6
Units
kA
A
2
s
kA
A
2
s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 12.0kN
with mounting compound
Forward (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Clamping force
-
-55
11.5
175
200
13.5
o
Min.
dc
Anode dc
-
-
-
-
-
-
Max.
0.032
0.064
0.064
0.008
0.016
185
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
Double side
Single side
o
R
th(c-h)
Thermal resistance - case to heatsink
o
C
C
C
o
kN
CHARACTERISTICS
Symbol
V
FM
I
RRM
Q
S
I
RR
V
TO
r
T
Parameter
Forward voltage
Peak reverse current
Total stored charge
Peak recovery current
Threshold voltage
Slope resistance
Conditions
At 1800A peak, T
case
= 25
o
C
At V
RRM
, T
case
= 175
o
C
I
F
= 1000A, dI
RR
/dt = 3A/µs
T
case
= 175˚C, V
R
= 100V
At T
vj
= 175˚C
At T
vj
= 175˚C
Min.
-
-
-
-
-
-
Max.
1.07
50
600
60
0.77
0.118
Units
V
mA
µC
A
V
mΩ
2/8
DS1101SG
CURVES
5000
Measured under pulse
conditions
4000
Instantaneous forward current I
F
- (A)
3000
T
j
= 25˚C
2000
T
j
= 175˚C
1000
0
0.5
1.0
1.5
2.0
Instantaneous forward voltage V
F
- (V)
FIG. 1 MAXIMUM (LIMIT) FORWARD CHARACTERISTICS
3/8
DS1101SG
5000
4000
Mean power dissipation - (W)
dc
3000
Half wave
3 phase
2000
6 phase
1000
0
0
1000
2000
3000
Mean forward current I
F(AV)
- (A)
FIG. 2 DISSIPATION CURVES
4000
4/8
DS1101SG
10000
I
F
Q
S
dI
F
/dt
I
RR
Stored charge Q
S
- (µC)
Conditions:
T
j
= 175˚C
V
R
= 100V
I
F
= 1000A
1000
100
0.1
1.0
10
Rate of decay of on-state current dI
F
/dt - (A/µs)
FIG. 3 MAXIMUM TOTAL STORED CHARGE
100
1000
Conditions:
T
j
= 175˚C
V
R
= 100V
I
F
= 1000A
Reverse current I
RR
- (A)
100
10
0.1
1.0
10
100
Rate of decay of forward current dI
F
/dt - (A/µs)
FIG. 4 MAXIMUM REVERSE RECOVERY CURRENT
5/8
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