DHF 30 IM 600PN
advanced
Sonic-FRD
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
(Marking on product)
V
RRM
=
I
FAV
=
t
rr
=
600 V
15 A
35 ns
1
2
3
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
DHF 30 IM 600PN
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Package:
TO-220FPAB
●
Industry standard outline
●
Plastic overmolded tab for
electrical isolation
●
Epoxy meets UL 94V-0
●
RoHS compliant
de
si
gn
Ratings
min.
typ.
max.
600
50
5
2.37
3.18
2.22
3.11
15
1.31
29.2
3.50
-55
150
35
200
12
35
40
0.5
0.9
Unit
V
µA
mA
V
V
V
V
A
V
m
Ω
K/W
°C
W
A
A
A
ns
ns
pF
mJ
A
Symbol
V
RRM
I
R
V
F
Definition
max. repetitive reverse voltage
reverse current
Conditions
w
L = 100 µH
V
R
= 600 V
V
R
= 600 V
ne
2 A;
T
VJ
= 25 °C
T
VJ
= 25 °C
T
VJ
= 125 °C
T
VJ
= 25 °C
T
VJ
= 125 °C
T
C
= 35 °C
T
VJ
= 150 °C
forward voltage
I
FAV
V
F0
r
F
R
thJC
T
VJ
P
tot
I
FSM
I
RM
t
rr
C
J
E
AS
I
AR
t
average forward current
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
No
for power loss calculation only
fo
r
I
AS
=
I
F
= 30 A
I
F
= 60 A
I
F
= 30 A
I
F
= 60 A
rectangular, d = 0.5
T
C
= 25 °C
t
p
= 10 ms (50 Hz), sine
I
F
= 30 A;
-di
F
/dt = 600 A/µs
V
R
= 400 V
V
R
= 300 V; f = 1 MHz
V
A
= 1.5·V
R
typ.; f = 10 kHz
T
VJ
= 45 °C
T
VJ
= 25 °C
T
VJ
= 125 °C
T
VJ
= 25 °C
T
VJ
= 125 °C
T
VJ
= 25 °C
T
VJ
= 25 °C
reverse recovery time
junction capacitance
non-repetitive avalanche energy
repetitive avalanche current
Recommended replacement:
DHG30I600HA, DHG30I600PA
IXYS reserves the right to change limits, conditions and dimensions.
* Data according to IEC 60747and per diode unless otherwise specified
0540
© 2006 IXYS all rights reserved
20080317a
DHF 30 IM 600PN
advanced
Ratings
Symbol
I
RMS
R
thCH
M
D
F
C
T
stg
Weight
Definition
RMS current
thermal resistance case to heatsink
mounting torque
mounting force with clip
storage temperature
Conditions
per pin*
min.
typ.
max.
35
Unit
A
K/W
0.50
0.4
20
-55
2
0.6
60
150
Nm
N
°C
g
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines TO-220FPAB
ØP
E
A1
A
H
Q
D
L1
L
fo
No
e
t
b1
b
r
ne
A2
c
w
de
si
gn
0540
IXYS reserves the right to change limits, conditions and dimensions.
* Data according to IEC 60747and per diode unless otherwise specified
© 2006 IXYS all rights reserved
Analog electronics
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