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P4KE75-G

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size123KB,6 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
Download Datasheet Parametric View All

P4KE75-G Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41

P4KE75-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Code_compli
ECCN codeEAR99
Breakdown voltage nominal value75 V
Maximum clamping voltage13.8 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 codee3
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage60.7 V
surface mountNO
Terminal surfaceTin (Sn)
Base Number Matches1
400W Transient Voltage Suppressor
P4KE-G Series
Stand-off Voltage: 6.8 ~ 600V
Power Dissipation: 400 Watts
RoHS Device
Features
-Glass passivated chip
-Low leakage
-Uni and Bidirection unit
-Excellent clamping capability
-The plastic material has UL recognition 94V-0
-Fast response time: typically less than 1.0pS from
0 volts to BV min
DO-41
0.033(0.84)
DIA.
0.028(0.71)
1.000(25.40)
MIN.
0.205(5.21)
0.165(4.19)
Mechanical Data
-Case: Molded plastic DO-41
-Polarity: By cathode band denotes unidirectional
device none cathode band denoted bi-directional
device
-Weight: 0.34 grams
1.000(25.40)
MIN.
0.117(2.97)
DIA.
0.090(2.29)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Peak power dissipation a 10/1000
μs
waveform
(Note 1)
Peak pulse current with a 10/1000
μs
waveform
(Note 1)
Power dissipation on infinite heatsink at T
L
=75 C
Peak forward surge current, 8.3mS single
half sine-wave unidirectional only(Note 2)
Maximum instantaneous forward voltage
at 25A for unidirectional only (Note 3)
Operating junction and storage temperature
range
O
Symbol
P
PP
Value
400
Unit
W
I
PP
PD
See Next Table
1.0
40
3.5/5.0
A
W
A
V
O
I
FSM
V
F
T
J
, T
STG
-55 to +150
C
NTOES:
(1) Non-repetitive current pulse, per fig.5 and derated above TA=25
O
C per fig. 1.
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave,duty cycle=4 pulses per minute maximum.
(3) V
F
<3.5V for devices of V
BR
<200V and V
F
<5.0V for devices of V
BR
>201V.
REV:B
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