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P4KE82A

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size32KB,3 Pages
ManufacturerSynSemi
Websitehttp://www.synsemi.com/
Download Datasheet Parametric View All

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P4KE82A Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41

P4KE82A Parametric

Parameter NameAttribute value
MakerSynSemi
Reach Compliance Codeunknown
P4KE SERIES
V
BR
: 6.8 - 550 Volts
P
PK
: 400 Watts
FEATURES :
* 400W surge capability at 1ms
* Excellent clamping capability
* Low zener impedance
* Fast response time : typically less
then 1.0 ps from 0 volt to V
BR(min.)
* Typical I
R
less then 1µA above 10V
TRANSIENT VOLTAGE
SUPPRESSOR
DO - 41
0.107 (2.74)
0.080 (2.03)
1.00 (25.4)
MIN.
0.205 (5.20)
0.160 (4.10)
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end except Bipolar.
* Mounting position : Any
* Weight : 0.339 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
Rating at 25
°
C ambient temperature unless otherwise specified.
Rating
Peak Power Dissipation at Ta = 25
°
C, Tp=1ms
(Note1)
Steady State Power Dissipation at T
L
= 75
°
C
Lead Lengths 0.375", (9.5mm)
(Note 2)
Peak Forward Surge Current, 8.3ms Single Half
Sine-Wave Superimposed on Rated Load
(JEDEC Method)
(Note 3)
Operating and Storage Temperature Range
Notes :
Symbol
P
PK
P
D
Value
Minimum 400
1.0
Unit
W
W
I
FSM
40
A
T
J,
T
STG
- 65 to + 175
°
C
(1) Non-repetitive Current pulse, per Fig. 5 and derated above Ta = 25
°
C per Fig. 1
2
2
(2) Mounted on Copper Leaf area of 1.57 in (40mm ).
(3) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minutes maximum.
Page 1 of 3
Rev. 02 : January 28, 2004
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