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P4KE9.1

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size397KB,4 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
Download Datasheet View All

P4KE9.1 Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41

P4KE Series
TRANSIENT VOLTAGE SUPPRESSORS
Features
• Glass passivated junction
• 400 W pulse capability on 10/1000 µs wave form
• Excellent clamping capability
• Low Zener impedance
• Fast response time
Mechanical Data
• Case: DO-41 molded plastic body
• Terminals: Solder axial plated, solderable per MIL-STD-750,
method 2026
• Polarity: Color band denotes cathode end
Devices for bidirectional applications
• For bidirectional use C or CA suffix for types P4KE6.8 thru types P4KE440A (e.g. P4KE6.8C, P4KE440CA)
• Electrical characteristics apply in both directions
Absolute Maximum Ratings (T
a
= 25
O
C unless otherwise specified)
Parameter
Peak Power Dissipation
1)
Steady State Power Dissipation at T
j
= 75
O
C Lead Length 0.375"(9.5 mm)
2)
Peak Forward Surge Current 8.3 ms Single Half Sine-wave Superimposed on
Rated Load (JEDEC method), Unidirectional only
3)
Maximum Instantaneous Forward Voltage at 25 A, for unidirectional only
4)
Operating Junction and Storage Temperature Range
1)
Symbol
P
PPK
P
D
I
FSM
V
F
T
j
, T
stg
Value
Min. 400
1
40
3.5 / 6.5
- 55 to + 175
Unit
W
W
A
V
O
C
Non-repetitive current pulse and derated above T
A
= 25
O
C.
2)
Mounted on Copper pads area of 1.6 X 1.6" (40 X 40 mm).
3)
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. For
uni-directional devices only.
4)
V
F
: 3.5 V Max. for types of V
(BR)
200 V, and V
F
: 6.5 V Max. for types of V
(BR)
> 200 V.
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/12/2008 J
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