RATING CHARACTERISTIC CURVES ( P4SSMJ6.8CAPT ~ P4SSMJ20
FIG. 1 - PEAK PULSE POWER RATING CURVE
PEAK PULSE POWER (P
PP
) OR CURRENT
(I
PP
) DERATING IN PERCENTAGE,%
FIG. 2 - PULSE DERATING C
100
P
PPM
, PEAK PULSE POWER, KW
Non-Repetitive
Pulse Waveform
Shown in Fig.3
T
A
= 25
O
C
100
10
75
50
1.0
25
0.1
0.1uS
1.0uS
10uS
100uS
1.0mS
10mS
0
0
25
50
75
100
125
T
P
, PULSE WIDTH, Sec
T
A
, AMBIENT TEMPERATU
FIG. 3 - PULSE WAVEFORM
150
tr = 10usec.
Pulse Width (td) is Defined
as the Point Where the Peak
Current Decays to 50% of I
PPM
100000
FIG. 4 - TYPICAL JUNCTION CA
UNI-DIRECTIONAL
I
PPM
, PEAK PULSE CURRENT,%
C
J
, CAPACITANCE, pF
100
Peak Value
I
PPM
10000
f=1
Vsig
T
J
=
I
PPM
2
10/1000usec. Waveform
as Defined by R.E.A.
HALF VALUE -
50
1000
Measured at Devices
Stand off
Voltage,V
WM
0
td
0
1.0
2.0
t, TIME,mS
3.0
4.0
10
1.0
10
V(
BR
), BREAKDOWN VOLTAC
RATING CHARACTERISTIC CURVES ( P4SSMJ6.8CA ~ P4SSMJ200CA )
FIG. 5 - STEADY STATE POWER DERATING CURVE
1.00
60Hz
Resistive or Inductive Load
FIG. 6 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT UNIDIRECTIONAL
50
8.3ms Single Half Sine-Wave
(JEDED Method) T
J
= T
J
max.
DISSIATION, WATTS
0.75
I
FSM
, PEAK FORWARD SURGE
CURRENT AMPERES
25
50
75
100
125
150
175
200
40
30
20
10
0.50
0.25
0
0
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
T
L
, LEAD TEMPERATURE (
O
C
)
FIG. 7 -TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
100
I
R
, INSTANTANEOUS REVERSE LEAKAGE
CHRRENT, MICROAMPERES
10
Measured at Devices
Stand-off
Voltage, V
WM
1
0.1
T
J
= 25
O
C
0.01
0
100
200
300
400
600
V(
BR
) BREAKDOWN VOLTAGE, VOLTS
Microchip MCU
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