SEMICONDUCTOR
TECHNICAL DATA
APPLICATION
・I/O
ESD protection for mobile handsets, notebook, PDAs, etc.
・EMI
filtering for data ports in cell phones, PDAs, notebook computers
・EMI
filtering for LCD, camera and chip-to-chip data lines
A
PF1015UDF8B
ESD/EMI Filter
C
1
E
4
FEATURES
・EMI/RFI
filtering
・ESD
Protection to IEC 61000-4-2 Level 4
・Low
insertion loss
・Good
attenuation of high frequency signals
・Low
clamping voltage
・Low
operating and leakage current
・Four
elements in one package
J
GND PAD
H
8
Pin 1
B
F
D
5
TOP VIEW
BOTTOM VIEW
K
L
SIDE VIEW
DESCRIPTION
PF1015UDF8B is an EMI filter array with electrostatic discharge (ESD) protection,
which integrates four pi filters (C-R-C). These parts include ESD protection diodes on
every pin, providing a very high level of protection for sensitive electronic components
that may be subjected to electrostatic discharge.
The PF1015UDF8B provides the recommended line termination while implementing a
low pass filter to limit EMI levels and providing ESD protection which exceeds IEC
61000-4-2 level 4 standard. The UDFN package is a very effective PCB space
occupation and a very thin package (0.4mm Pitch, 0.5mm height)
1,8 : Filter channel 1
2,7 : Filter channel 2
3,6 : Filter channel 3
4,5 : Filter channel 4
DIM
A
B
C
D
E
F
G
H
J
K
L
MILLIMETERS
_
1.70
+
0.10
_
1.35
+
0.10
_
0.10
1.20
+
_
0.20
+
0.05
0.40
_
0.40
+
0.10
_
0.25
+
0.10
0.20 Min
_
0.50
+
0.05
0.127
0.02+0.03/-0.02
UDFN-8B
MARKING
Type Name
CHARACTERISTIC
DC Power Per Resistor
Power Dissipation
Junction Temperature
Storage Temperature
* Total Package Power Dissipation
SYMBOL
P
R
*P
D
T
j
T
stg
RATING
100
400
150
-55½150
UNIT
mW
0 A
MAXIMUM RATING (Ta=25℃)
T3
Lot No.
RECOMMENEDED FOOTPRINT
(dimensions in mm)
0.40
0.30
EQUIVALENT CIRCUIT
1.66
0.55
FILTERn*
100Ω
FILTERn*
0.25
15pF
15pF
0.70
GND
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Cutoff Frequency
Channel Resistance
Line Capacitance
SYMBOL
V
RWM
V
BR
I
R
fc
-3dB
R
LINE
C
LINE
I
t
=1mA
V
RWM
=3.3V
V
Line
=0V, Z
SOURCE
=50Ω, Z
LOAD
=50Ω
Between Input and Output
V
Line
=0V DC, 1MHz, Between I/O Pins and GND
V
Line
=2.5V, 1MHz, Between I/O Pins and GND
TEST CONDITION
-
MIN.
-
6
-
-
80
36
24
TYP.
-
-
-
110
100
45
30
MAX.
5
-
1.0
-
120
54
36
UNIT
V
V
μ
A
MHz
Ω
pF
2009. 5. 26
Revision No : 2
G
1/2
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