EEWORLDEEWORLDEEWORLD

Part Number

Search

PG105

Description
6.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
Categorysemiconductor    Discrete semiconductor   
File Size52KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
Download Datasheet Compare View All

PG105 Overview

6.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE

BL
FEATURES
Low cost
GALAXY ELECTRICAL
PG101---PG108
VOLTAGE RANGE: 100 --- 1000 V
CURRENT: 1.0 A
FAST RECOVERY RECTIFIER
DO - 41
Diffused junction
Glass passivated junction
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
PG
101
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
PG
102
200
140
200
PG
103
300
210
300
PG
104
400
280
400
1.0
PG
105
500
350
500
PG
106
600
420
600
PG
107
800
560
800
PG
108
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=125
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
150
1.3
5.0
100.0
250
12
55
- 55---- +175
- 55---- + 175
500
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0261015
BL
GALAXY ELECTRICAL
1.

PG105 Related Products

PG105 PG102 PG101 PG103 PG104 PG106 PG108 PG107
Description 6.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 6.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 6.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 6.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 6.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 6.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 6.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 6.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
What is the input voltage of the power chip that steps down the 24V battery to 5V?
The 24V car battery is powered by a step-down chip to 5V. What is the lowest input voltage of this (DC/DC or LDO) step-down chip? Is it 35V or 40V? Thank you....
stm32f103vct6 Power technology
Application of TLC5615 10-bit serial port digital-to-analog conversion chip
Application of TLC5615 10-bit serial port digital-to-analog conversion chip...
化升 TI Technology Forum
There is no future for searching separately on Google and Baidu
You can see the results for yourself, haha....
凯哥 Talking about work
Why can't the segment code LCD screen be lit up when driving with STML152?
I switched from STM32F103 to STM32L152. Now I want to drive the segment LCD but it can't light up. I want relevant information or examples! Or guide me. Thank you! !...
渣渣华 stm32/stm8
103VE FSMC usage consultation
I hope that the FSMC of the 103VE system can work in a non-multiplexed mode to expand two DAC chips. If the NE1 signal is used to select the device, the logic circuit must be increased. Can A23 and A2...
baozugong stm32/stm8
Download the white paper and win a prize: VICOR helps you overcome the biggest power system design challenges!
Power engineers face many challenges. Vicor's research found that coping with power system specification changes during the development process is the biggest challenge. [/color][/size][/font] [float=...
EEWORLD社区 Power technology

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 552  974  410  2256  2680  12  20  9  46  54 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号