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FEATURES
Low cost
GALAXY ELECTRICAL
PG101---PG108
VOLTAGE RANGE: 100 --- 1000 V
CURRENT: 1.0 A
FAST RECOVERY RECTIFIER
DO - 41
Diffused junction
Glass passivated junction
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
PG
101
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
PG
102
200
140
200
PG
103
300
210
300
PG
104
400
280
400
1.0
PG
105
500
350
500
PG
106
600
420
600
PG
107
800
560
800
PG
108
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=125
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
150
1.3
5.0
100.0
250
12
55
- 55---- +175
- 55---- + 175
500
V
A
ns
pF
／Ｗ
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
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2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0261015
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
PG101---PG108
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
t
rr
50
N.1.
10
N.1.
+0.5A
D.U.T.
(+)
50VDC
(APPROX)
(-)
1
N.1.
( - )
0
-0.25A
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
( + )
-1.0A
NOTE
S:1.R TIM =75ns M INP IM E
ISE E
AX. UT P DANCE
=1M .22pF
2.RISETIM =10ns M SOU
E
AX.
RCEIM E CE
P DAN =5O
SE TIM BASEFOR 50/100 ns /cm
T E
1cm
FIG.2 --FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT
AMPERES
FIG.3 --PEAK FORWARD SURGE CURRENT
AVERAGE FORWARD CURRENT
AMPERES
1.5
30
1.25
24
1.0
18
T
J
=125
8.3ms Single Half
Sine-Wave
0.75
Single Phase
Half W ave 60H
Z
Resistive or
Inductive Load
12
0.5
6
0.25
0
1
2
4
10
20
40
100
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE,
FIG.4-- TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT
AMPERES
NUMBER OF CYCLES AT 60 Hz
FIG.5-- TYPICAL JUNCTION CAPACITANCE
100
10
T
J
=25
Pulse Width=300
µ
S
10
JUNCTION CAPACITANCE,pF
16
14
4
2
1.0
0. 4
0. 2
0. 1
0 .06
12
10
4
TJ=25
f=1MHz
2
1
.1
0.0 2
0 .01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
.2
.4
1.0
2
4
10
20
40
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
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Document Number 0261015
BL
GALAXY ELECTRICAL
2.
Embedded System
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