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PH1113-100

Description
Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 GHz, 3ms Pulse, 30% Duty
CategoryDiscrete semiconductor    The transistor   
File Size131KB,3 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Environmental Compliance
Download Datasheet Parametric View All

PH1113-100 Overview

Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 GHz, 3ms Pulse, 30% Duty

PH1113-100 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMACOM
package instructionFLANGE MOUNT, R-CDFM-F2
Contacts2
Reach Compliance Codecompli
Other featuresWITH EMITTER BALLASTING RESISTORS, HIGH RELIABILITY
Shell connectionBASE
Maximum collector current (IC)9 A
ConfigurationSINGLE
highest frequency bandL BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)350 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
PH1113-100
Radar Pulsed Power Transistor
100W, 1.1-1.3 GHz, 3µs Pulse, 30% Duty
Features
NPN silicon microwave power transistors
Common base configuration
Broadband Class C operation
High efficiency inter-digitized geometry
Diffused emitter ballasting resistors
Gold metallization system
Internal input and output impedance matching
Hermetic metal/ceramic package
RoHS compliant
M/A-COM Products
Released, 30 May 07
Outline Drawing
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
V
CES
V
EBO
I
C
P
TOT
T
STG
T
J
Rating
70
3.0
9.0
350
-65 to +200
200
Units
V
V
A
W
°C
°C
Electrical Specifications: T
C
= 25 ± 5°C (
Room Ambient
)
Parameter
Test Conditions
Frequency
Symbol
BV
CES
I
CES
F = 1.1, 1.2, 1.3 GHz
F = 1.1, 1.2, 1.3 GHz
F = 1.1, 1.2, 1.3 GHz
F = 1.1, 1.2, 1.3 GHz
F = 1.1, 1.2, 1.3 GHz
F = 1.1, 1.2, 1.3 GHz
F = 1.1, 1.2, 1.3 GHz
R
TH(JC)
P
IN
G
P
Min
70
-
-
-
8.0
52
-
-
-
Max
-
10
0.5
16
-
-
-9
3:1
1.5:1
Units
V
mA
°C/W
W
dB
%
dB
-
-
Collector-Emitter Breakdown Voltage I
C
= 50mA
Collector-Emitter Leakage Current
Thermal Resistance
Input Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
V
CE
= 32V
Vcc = 32V, Pout = 100W
Vcc = 32V, Pout = 100W
Vcc = 32V, Pout = 100W
Vcc = 32V, Pout = 100W
Vcc = 32V, Pout = 100W
Vcc = 32V, Pout = 100W
Vcc = 32V, Pout = 100W
η
C
RL
VSWR-T
VSWR-S
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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