PH1819-15N
Wireless Bipolar Power Transistor
15W, 1.78-1.90 GHz
Features
•
•
•
•
•
•
•
•
NPN silicon microwave power transistor
Designed for linear amplifier applications
Class AB: -34 dBc typ. 3rd IMD at 15 W PEP
Class A: +48 dBm typ. 3rd order intercept point -
Common emitter configuration
Internal input impedance matching
Diffused emitter ballasting
Gold metallization system
M/A-COM Products
Released - Rev. 07.07
Outline Drawing
ABSOLUTE MAXIMUM RATING AT 25°C
Parameter
Symbol
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
V
CBO
V
CES
V
EBO
I
C
P
D
T
J
T
STG
θ
JC
60
60
3.0
2.0
58
200
-55 to + 150
Units
V
V
V
A
W
°C
°C
°C/W
3.0
ELECTRICAL SPECIFICATIONS AT 25°C
Parameter
Symbol
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Forward Current Gain
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
3rd Order IMD
BV
CES
I
CES
BV
CEO
BV
EBO
h
FE
G
P
ŋ
C
Min
60
-
24
3.0
15
7.0
25
10
-
-
Max
-
1.0
-
-
120
-
-
-
10:1
-30
Units
V
mA
V
V
-
dB
%
dB
-
dBc
I
C
= 10mA
V
CE
= 24V
I
C
= 10mA
I
B
= 10mA
Test Conditions
V
CE
= 5V, I
C
= 0.5 mA
V
CC
= 26V, I
CQ
= 25 mA, P
out
= 15 W PEP, F =1880 GHz,
Δ
F=100kHz
V
CC
= 26V, I
CQ
= 25 mA, P
out
= 15 W PEP, F =1880 GHz,
Δ
F=100kHz
V
CC
= 26V, I
CQ
= 25 mA, P
out
= 15 W PEP, F =1880 GHz,
Δ
F=100kHz
V
CC
= 26V, I
CQ
= 25 mA, P
out
= 15 W PEP, F =1880 GHz,
Δ
F=100kHz
V
CC
= 26V, I
CQ
= 25 mA, P
out
= 15 W PEP, F =1880 GHz,
Δ
F=100kHz
RL
VSWR
IMD
3
TYPICAL OPTIMUM DEVICE IMPEDANCES
F (MHz)
1780
1850
1880
1880
1900
Z
IN
(Ω)
10.5+j12.3
11.4+j11
11.9+j6.2
9.9+j3.6
8.8+j1.9
Z
LOAD
(Ω)
1.6-j1.9
1.6-j2.2
1.6-j.2.5
1.6-j2.7
1.4-j2.7
INPUT
NETWORK
OUTPUT
NETWORK
Z
LOAD
Z
IN
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
PH1819-15N
Wireless Bipolar Power Transistor
15W, 1.78-1.90 GHz
TEST FIXTURE DIMENSIONS
M/A-COM Products
Released - Rev. 07.07
TEST FIXTURE ASSEMBLY
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
+
changes to the product(s) or information contained herein without notice.
PH1819-15N
Wireless Bipolar Power Transistor
15W, 1.78-1.90 GHz
Typical Broadband Performance Curves
GAIN-EFFICIENCY
VS
FREQUENCY
P
out
=15 W PEP V
CC
=26 V I
CQ
=25 mA
Gain
75
50
25
0
1880
Eff (%)
M/A-COM Products
Released - Rev. 07.07
9
8
G
P
(dB)
7
100
24
20
16
OUTPUT POWER
VS
COLLECTOR VOLTAGE
I
CC
=25 mA F1=1880.0 MHz F2=1880.1 MHz
CW Efficiency
6
5
4
1805
2 Tone efficiency
P
OUT
(W)
12
8
4
0
12
P
IN
=4.0 W
P
IN
=2.0 W
P
IN
=1.0 W
1850
FREQUENCY (MHz)
16
20
24
28
COLLECTOR VOLTAGE (V)
12
10
8
6
Gain
VS
P
OUT
V
CC
= 26 V F1 = 1880.0 MHz F2= 1880.1 MHz
I
CO
=1.0 A
IMD
VS
P
OUT
V
CC
= 26 V I
CQ
=100 mA F1 = 1880.0 MHz F2= 1880.1 MHz
-15
Class AB
2.7
I
CO
=100mA
IMD (dBc)
-30
5th
3rd
1.8
G
P
(dB)
-45
I
C
7th
0.9
I
CO
=25 mA
4
25
27
29
31
33
35
37
38
41
43
P
OUT
(dBm)
-60
25
0
27
29
31
33
35
37
38
41
43
P
OUT
(PEP) in dBm
V
CC
= 26 V I
CQ
= 25 mA F1 = 1880.0 MHz F2= 1880.1 MHz
IMD
VS
P
OUT
Class AB
V
CC
= 26 I
CO
= 1.0 A F1 = 1880.0 MHz F2= 1880.1 MHz
IMD
VS
P
OUT
Class A
-15
3rd
2.7
-15
9
-30
G
P
(dB)
5th
1.8
G
P
(dB)
I
C
(A)
-30
3rd
6
I
C
(A)
-45
7th
I
C
0.9
-45
I
C
5th
7th
3
-60
25
27
29
31
33
35
37
38
41
43
P
OUT
(PEP) dBm
0
-60
25
27
29
31 33 35 37
P
OUT
(PEP) in dBm
38
41
43
0
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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