PH3134-11S
Radar Pulsed Power Transistor
11W, 3.1-3.4 GHz, 1µs Pulse, 10% Duty
Features
•
•
•
•
•
•
•
•
•
NPN silicon microwave power transistors
Common base configuration
Broadband Class C operation
High efficiency inter-digitized geometry
Diffused emitter ballasting resistors
Gold metallization system
Internal input and output impedance matching
Hermetic metal/ceramic package
RoHS compliant
M/A-COM Products
Released, 10 Jul 07
Outline Drawing
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
V
CES
V
EBO
I
C
P
TOT
T
STG
T
J
Rating
60
3.0
1.3
125
-65 to +200
200
Units
V
V
A
W
°C
°C
Electrical Specifications: T
C
= 25 ± 5°C (
Room Ambient
)
Parameter
Test Conditions
Frequency
Symbol
BV
CES
I
CES
F = 3.1, 3.25, 3.4 GHz
F = 3.1, 3.25, 3.4 GHz
F = 3.1, 3.25, 3.4 GHz
F = 3.1, 3.25, 3.4 GHz
F = 3.1, 3.25, 3.4 GHz
F = 3.25 GHz
R
TH(JC)
P
IN
G
P
Min
60
-
-
-
8.0
35
-
-
Max
-
1.25
1.4
1.74
-
-
-6
2:1
Units
V
mA
°C/W
W
dB
%
dB
-
Collector-Emitter Breakdown Voltage I
C
= 12.5mA
Collector-Emitter Leakage Current
Thermal Resistance
Input Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
V
CE
= 36V
Vcc = 36V, Pout = 11W
Vcc = 36V, Pout = 11W
Vcc = 36V, Pout = 11W
Vcc = 36V, Pout = 11W
Vcc = 36V, Pout = 11W
Vcc = 36V, Pout = 11W
η
C
RL
VSWR-T
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
PH3134-11S
Radar Pulsed Power Transistor
11W, 3.1-3.4 GHz, 1µs Pulse, 10% Duty
RF Test Fixture Impedance
F (GHz)
3.10
3.25
3.40
Z
IF
(Ω)
17.5 - j8.5
15.0 - j8.2
13.0 - j8.0
Z
OF
(Ω)
90 + j37
58 + j7.0
30 + j14.5
M/A-COM Products
Released, 10 Jul 07
Test Fixture Circuit Dimensions
Test Fixture Assembly
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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