8T64A datasheet, PDF - EEWORLD Datasheet

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8T64A: DescriptionTRIAC, 600V V(DRM), 4A I(T)RMS, TO-202,; CategoryAnalog mixed-signal IC Trigger device; File Size212KB，2 Pages; ManufacturerHutson Industries

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8T64A Overview

TRIAC, 600V V(DRM), 4A I(T)RMS, TO-202,

8T64A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Hutson Industries
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
Shell connection	MAIN TERMINAL 2
Configuration	SINGLE
Critical rise rate of commutation voltage - minimum value	4 V/us
Critical rise rate of minimum off-state voltage	150 V/us
Maximum DC gate trigger current	50 mA
Maximum DC gate trigger voltage	2.5 V
Maximum holding current	30 mA
JEDEC-95 code	TO-202
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Maximum leakage current	0.5 mA
Number of components	1
Number of terminals	3
Maximum operating temperature	110 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	4 A
Maximum repetitive peak off-state leakage current	500 µA
Off-state repetitive peak voltage	600 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	TRIAC
Base Number Matches	1

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MAXIMUM RATINGS

REPETITIVE PEAK OFF-STATE VOLTAGE (1)

GATE OPEN, AND TJ = 110° C

RMS ON-STATE CURRENT AT TC = 80º C AND

CONDUCTION, ANGLE OF 360º

PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT,

ONE-CYCLE, AT 50HZ OR 60HZ

PEAK GATE - TRIGGER CURRENT FOR 3µSEC. MAX.

PEAK GATE-POWER DISSIPATION AT IGT < IGTM

AVERAGE GATE - POWER DISSIPATION

STORAGE TEMPERATURE RANGE

OPERATING TEMPERATURE RANGE, Tj

ELECTRICAL CHARACTERISTICS

AT SPECIFIED CASE TEMPERATURE

PEAK OFF - STATE CURRENT (1) GATE OPEN

TC = 110° C VDRM = MAX. RATING

MAXIMUM ON - STATE VOLTAGE, (1) AT TC = 25° C AND

IT = RATED AMPS

DC HOLDING CURRENT, (1) GATE OPEN AND TC = 25° C

CRITICAL RATE-OF-RISE OF OFF-STATE VOLTAGE, (1)

FOR VD = VDRM GATE OPEN, TC = 110° C

CRITICAL RATE-OF-RISE OF COMMUNICATION

VOLTAGE, (1) AT TC = 80° C, GATE UNENERGIZED,

VD = VDRM, IT = IT (RMS)

DC GATE - TRIGGER CURRENT FOR

VD = 12VDC. RL = 60 OHM AND AT TC = 25° C

(T2 + GATE + T2 - GATE-) Q 1 & 3

(T2 + GATE - T2 - GATE +) Q 2 & 4

DC GATE - TRIGGER VOLTAGE FOR

VD = 12VDC. RL = 60 OHM AND AT TC = 25° C

GATE CONTROLLED TURN-ON TIME

FOR VD = VDRM IGT = 80MA TR = 0.1 µSEC.

IT = 6A (PEAK) AND TC = 25° C

THERMAL RESISTANCE, JUNCTION-TO-CASE

NOTES:

(1) ALL VALUES APPLY IN BOTH DIRECTIONS

SYMBOL VDRM

VDRM

IT(RMS)

ITSM

IGTM

PGM

PG(AV)

Tstg

Toper

200

400

600

DEVICE NUMBERS

8T24*

8T44*

8T64*

4.0

1.2

0.3

8T26*

8T46*

8T66*

6.0

1.6

0.4

-40 to +150

-40 to +110

8T28*

8T48*

8T68*

8.0

1.6

0.4

UNITS

VOLT

AMP

WATT

°C

IDRM

VTM

IHO

CRITICAL

dv/dt

COMMUTATING

0.5

1.6

150

SEE

GATE

SPECS.

2.5

4.0

0.5

1.6

150

SEE

GATE

SPECS.

2.5

4.2

0.5

1.6

150

SEE

GATE

SPECS.

2.5

3.8

MAX.

VOLT

MAX.

V/µSEC.

dv/dt

IGT

MAX.

VOLT

MAX.

µSEC.

°C / WATT

TYP

VGT

Tgt

R0J-C

GATE SPECS

SUFFIX

III

N/S

*Add required suffix letter to part number.

--Other gate specs available consult factory---

N/S

SOLID STATE CONTROL DEVICES

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