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5962-0250101QXC

Description
Standard SRAM, 128KX8, 40ns, CMOS, 0.400 INCH, DFP-32
Categorystorage    storage   
File Size195KB,14 Pages
ManufacturerAtmel (Microchip)
Download Datasheet Parametric View All

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5962-0250101QXC Overview

Standard SRAM, 128KX8, 40ns, CMOS, 0.400 INCH, DFP-32

5962-0250101QXC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerAtmel (Microchip)
Parts packaging codeDFP
package instructionQFF, FL32,.4
Contacts32
Reach Compliance Codecompliant
ECCN code3A001.A.2.C
Maximum access time40 ns
I/O typeCOMMON
JESD-30 codeR-XDFP-F32
JESD-609 codee4
length20.825 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX8
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeQFF
Encapsulate equivalent codeFL32,.4
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
power supply3.3 V
Certification statusQualified
Filter levelMIL-PRF-38535 Class Q
Maximum seat height2.72 mm
Maximum standby current0.0015 A
Minimum standby current3 V
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceGold (Au)
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationDUAL
width10.415 mm
Base Number Matches1
Features
Operating Voltage: 3.3V
Access Time: 40 ns
Very Low Power Consumption
– Active: 180 mW (Max)
– Standby: 70 µW (Typ)
Wide Temperature Range: -55°C to +125°C
400 Mils Width Package
TTL Compatible Inputs and Outputs
Asynchronous
Designed on 0.35 Micron Process
Latch-up Immune
200 Krads capability
SEU LET Better Than 3 MeV
Description
The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the M65609E combines an
extremely low standby supply current (Typical value = 20 µA) with a fast access time
at 40 ns over the full military temperature range. The high stability of the 6T cell pro-
vides excellent protection against soft errors due to noise.
The M65609E is processed according to the methods of the latest revision of the MIL
STD 883 (class B or S), ESA SCC 9000 or QML.
It is produced on the same process as the MH1RT sea of gates series.
Rad. Hard
128K x 8
3.3-volt
Very Low Power
CMOS SRAM
M65609E
Rev. 4158D–AERO–06/02
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