RJH60D1DPP-M0-T2 datasheet, PDF

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RJH60D1DPP-M0-T2: Description16 A, 600 V, N-CHANNEL IGBT, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size158KB，4 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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RJH60D1DPP-M0-T2 Overview

16 A, 600 V, N-CHANNEL IGBT, TO-220AB

RJH60D1DPP-M0-T2 Parametric

Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	16 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE WITH BUILT-IN DIODE
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	140 ns
Nominal on time (ton)	60 ns

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Preliminary

RJH60D1DPP-M0

Silicon N Channel IGBT

Application: Inverter

Features

•

High breakdown-voltage

•

Low on-voltage

•

Built-in diode

REJ03G1839-0100

Rev.1.00

Oct 14, 2009

Outline

RENESAS Package code: PRSS0003AF-A

(Package name: TO-220FL)

1. Gate

2. Collector

3. Emitter

2 3

Absolute Maximum Ratings

(Ta = 25°C)

Item

Collector to emitter voltage / diode reverse voltage

Gate to emitter voltage

Collector current

Tc = 25°C

Tc = 100°C

Collector peak current

Collector to emitter diode forward current

Collector to emitter diode forward peak current

Collector dissipation

Junction to case thermal impedance

Junction temperature

Storage temperature

Notes: 1. PW

≤

μs,

duty cycle

≤

2. Value at Tc = 25°C

Symbol

CES

/ V

GES

ic(peak)

Note1

(peak)

Note1

C Note2

θj-c

Note2

Tstg

Ratings

600

±30

6.25

150

–55 to +150

Unit

°C/ W

°C

REJ03G1839-0100 Rev.1.00 Oct 14, 2009

Page 1 of 3

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Refer to "http://www.renesas.com/en/network" for the latest and detailed information.

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Colophon .7.2

RJH60D1DPP-M0-T2 Related Products

	RJH60D1DPP-M0-T2	RJH60D1DPP-M0
Description	16 A, 600 V, N-CHANNEL IGBT, TO-220AB	16 A, 600 V, N-CHANNEL IGBT, TO-220AB
Number of components	1	1
Number of terminals	3	3
Terminal form	THROUGH-HOLE	THROUGH-hole
Terminal location	SINGLE	single
transistor applications	POWER CONTROL	POWER control
Transistor component materials	SILICON	silicon

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