S1K datasheet, PDF - EEWORLD Datasheet

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S1K: Description1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC; Categorysemiconductor Discrete semiconductor; File Size38KB，1 Pages; ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.

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1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC

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CHONGQING PINGYANG ELECTRONICS CO.,LTD.

S1A THRU S1M

SURFACE MOUNT SILICON RECTIFIER

VOLTAGE：50-1000V

CURRENT：1.0A

FEATURES

·Ideal

for surface mounted applications

·Low

leakage current

·Glass

passivated junction

SMB(DO-214AA)

.083(2.11)

.075(1.91)

.185(4.70)

.160(4.06)

.012(0.305)

.006(0.152)

.155(3.94)

.130(3.30)

MECHANICAL DATA

·Case:

Molded plastic

·Epoxy:

UL94V-0 rate flame retardant

·Terminals:

Solder plated,solderable per

MIL-STD- 750, Method 2026

·Polarity:

As marked

·Mounting

position:

Any

·Weight:

0.093 grams

.096(2.44)

.084(2.13)

.060((1.52)

.030(0.76)

.008(0.203)

.002(0.051)

.220(5.59)

.200(5.08)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL S1A

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward rectified Current

at T

=75°C

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rate load (JEDEC

method)

Maximum forward Voltage at 1.0A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@ T

=25°C

@ T

=125°C

RRM

RMS

FSM

S1B

100

S1D

200

140

200

S1G

400

280

400

1.0

1.1

5.0

100

S1J

600

420

600

S1K

800

560

800

S1M

units

1000

700

1000

µA

°C/W

Typical Thermal Resistance (Note2)

θJL

Typical Junction Capacitance (Note1)

Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts

2.Thermal Resistance (Junction to Ambient), .0.2×0.2in

(5×5mm

) copper pads to each terminal

１

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S1K Related Products

	S1K	S1A	S1B	S1D	S1G	S1J	S1M	S2A
Description	1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA	1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC	SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE	1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC	NKK SWITCHES - S2A - SWITCH; TOGGLE; SPDT; 20A; 250VAC
Number of terminals	-	2	2	-	2	2	2	-
Number of components	-	1	1	-	1	1	1	-
state	-	ACTIVE	ACTIVE	ACTIVE	DISCONTINUED	ACTIVE	DISCONTINUED	-
packaging shape	-	RECTANGULAR	Rectangle	-	Rectangle	Rectangle	Rectangle	-
Package Size	-	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-
surface mount	-	Yes	Yes	-	Yes	Yes	Yes	-
Terminal form	-	C BEND	C BEND	-	C BEND	C BEND	C BEND	-
Terminal location	-	DUAL	pair	-	pair	pair	pair	-
Packaging Materials	-	PLASTIC/EPOXY	Plastic/Epoxy	-	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	-
structure	-	SINGLE	single	-	single	single	single	-
Diode component materials	-	SILICON	silicon	-	silicon	silicon	silicon	-
Diode type	-	SIGNAL DIODE	Signal diode	SIGNAL DIODE	Signal diode	Signal diode	Signal diode	-
Maximum repetitive peak reverse voltage	-	50 V	100 V	-	400 V	600 V	1000 V	-
Maximum average forward current	-	1 A	1 A	-	1 A	1 A	1 A	-

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