S1A datasheet, PDF - EEWORLD Datasheet

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S1A: Description1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA; Categorysemiconductor Discrete semiconductor; File Size38KB，1 Pages; ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.

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S1A Overview

1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA

S1A Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	C BEND
terminal coating	NOT SPECIFIED
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Diode component materials	SILICON
Diode type	SIGNAL DIODE
Maximum repetitive peak reverse voltage	50 V
Maximum average forward current	1 A

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CHONGQING PINGYANG ELECTRONICS CO.,LTD.

S1A THRU S1M

SURFACE MOUNT SILICON RECTIFIER

VOLTAGE：50-1000V

CURRENT：1.0A

FEATURES

·Ideal

for surface mounted applications

·Low

leakage current

·Glass

passivated junction

SMB(DO-214AA)

.083(2.11)

.075(1.91)

.185(4.70)

.160(4.06)

.012(0.305)

.006(0.152)

.155(3.94)

.130(3.30)

MECHANICAL DATA

·Case:

Molded plastic

·Epoxy:

UL94V-0 rate flame retardant

·Terminals:

Solder plated,solderable per

MIL-STD- 750, Method 2026

·Polarity:

As marked

·Mounting

position:

Any

·Weight:

0.093 grams

.096(2.44)

.084(2.13)

.060((1.52)

.030(0.76)

.008(0.203)

.002(0.051)

.220(5.59)

.200(5.08)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL S1A

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward rectified Current

at T

A

=75°C

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rate load (JEDEC

method)

Maximum forward Voltage at 1.0A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@ T

A

=25°C

@ T

A

=125°C

V

RRM

V

RMS

V

DC

I

o

I

FSM

V

F

I

R

50

35

50

S1B

100

70

100

S1D

200

140

200

S1G

400

280

400

1.0

30

1.1

5.0

100

12

30

S1J

600

420

600

S1K

800

560

800

S1M

units

1000

700

1000

V

A

V

µA

°C/W

Typical Thermal Resistance (Note2)

R

θJL

Typical Junction Capacitance (Note1)

C

J

Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts

2.Thermal Resistance (Junction to Ambient), .0.2×0.2in

2

(5×5mm

2

) copper pads to each terminal

pF

１

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S1A Related Products

	S1A	S1B	S1D	S1G	S1J	S1K	S1M	S2A
Description	1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA	1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC	SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE	1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC	NKK SWITCHES - S2A - SWITCH; TOGGLE; SPDT; 20A; 250VAC
Number of terminals	2	2	-	2	2	-	2	-
Number of components	1	1	-	1	1	-	1	-
state	ACTIVE	ACTIVE	ACTIVE	DISCONTINUED	ACTIVE	-	DISCONTINUED	-
packaging shape	RECTANGULAR	Rectangle	-	Rectangle	Rectangle	-	Rectangle	-
Package Size	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	-
surface mount	Yes	Yes	-	Yes	Yes	-	Yes	-
Terminal form	C BEND	C BEND	-	C BEND	C BEND	-	C BEND	-
Terminal location	DUAL	pair	-	pair	pair	-	pair	-
Packaging Materials	PLASTIC/EPOXY	Plastic/Epoxy	-	Plastic/Epoxy	Plastic/Epoxy	-	Plastic/Epoxy	-
structure	SINGLE	single	-	single	single	-	single	-
Diode component materials	SILICON	silicon	-	silicon	silicon	-	silicon	-
Diode type	SIGNAL DIODE	Signal diode	SIGNAL DIODE	Signal diode	Signal diode	-	Signal diode	-
Maximum repetitive peak reverse voltage	50 V	100 V	-	400 V	600 V	-	1000 V	-
Maximum average forward current	1 A	1 A	-	1 A	1 A	-	1 A	-

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