LF
BUK7Y18-75B
1 March 2013
PA
K
56
N-channel TrenchMOS standard level FET
Product data sheet
1. General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
2. Features and benefits
•
•
•
Q101 compliant
Suitable for standard level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
3. Applications
•
•
•
•
•
•
•
12 V, 24 V and 42 V loads
Automotive systems
DC-to-DC converters
Engine management
General purpose power switching
Motors, lamps and solenoids
Transmission control
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 1; Fig. 4
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 20 A; T
j
= 25 °C;
Fig. 12; Fig. 13
I
D
= 20 A; V
DS
= 60 V; V
GS
= 10 V;
Fig. 14
-
14.24
-
nC
Min
-
-
-
Typ
-
-
-
Max
75
49
105
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
13.8
18
mΩ
Dynamic characteristics
Q
GD
gate-drain charge
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NXP Semiconductors
BUK7Y18-75B
N-channel TrenchMOS standard level FET
Symbol
E
DS(AL)S
Parameter
non-repetitive drain-
source avalanche
energy
Conditions
I
D
= 49 A; V
sup
≤ 75 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
Min
-
Typ
-
Max
118
Unit
mJ
Avalanche ruggedness
5. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S
S
S
G
D
source
source
source
gate
mounting base; connected to
drain
1 2 3 4
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
LFPAK56; Power-
SO8 (SOT669)
6. Ordering information
Table 3.
Ordering information
Package
Name
BUK7Y18-75B
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
Type number
7. Marking
Table 4.
Marking codes
Marking code
71875B
Type number
BUK7Y18-75B
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
I
D
BUK7Y18-75B
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
R
GS
= 20 kΩ
Min
-
-
-20
Max
75
75
20
49
Unit
V
V
V
A
2 / 13
T
mb
= 25 °C; V
GS
= 10 V;
Fig. 1; Fig. 4
All information provided in this document is subject to legal disclaimers.
-
© NXP B.V. 2013. All rights reserved
Product data sheet
1 March 2013
NXP Semiconductors
BUK7Y18-75B
N-channel TrenchMOS standard level FET
Symbol
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
E
DS(AL)R
Parameter
peak drain current
total power dissipation
storage temperature
junction temperature
Conditions
T
mb
= 100 °C; V
GS
= 10 V;
Fig. 1
T
mb
= 25 °C; pulsed; t
p
≤ 10 µs;
Fig. 4
T
mb
= 25 °C;
Fig. 2
Min
-
-
-
-55
-55
Max
34.9
198
105
175
175
Unit
A
A
W
°C
°C
Source-drain diode
source current
peak source current
T
mb
= 25 °C
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
I
D
= 49 A; V
sup
≤ 75 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
Fig. 3
[1][2][3]
-
-
-
49
198
A
A
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
[1]
[2]
[3]
50
I
D
(A)
40
-
118
-
mJ
J
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
003aac508
120
P
der
(%)
80
03na19
30
20
40
10
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig. 1.
Continuous drain current as a function of
mounting base temperature
Fig. 2.
Normalized total power dissipation as a
function of mounting base temperature
BUK7Y18-75B
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© NXP B.V. 2013. All rights reserved
Product data sheet
1 March 2013
3 / 13
NXP Semiconductors
BUK7Y18-75B
N-channel TrenchMOS standard level FET
10
2
I
AL
(A)
003aac487
(1)
10
(2)
1
(3)
10
-1
10
-3
10
-2
10
-1
1
t
AL
(ms)
10
(1) Single pulse; T
j
= 25°C.
(2) Single pulse; T
j
= 150°C.
(3) Repetitive.
Fig. 3.
10
3
I
D
(A)
10
2
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
003aad516
Limit R
DSon
= V
DS
/ I
D
t
p
= 10 µs
100 µs
10
DC
1
1 ms
10 ms
100 ms
10
-1
1
10
10
2
V
DS
(V)
10
3
Fig. 4.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 5
Min
-
Typ
-
Max
1.42
Unit
K/W
BUK7Y18-75B
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© NXP B.V. 2013. All rights reserved
Product data sheet
1 March 2013
4 / 13
NXP Semiconductors
BUK7Y18-75B
N-channel TrenchMOS standard level FET
10
Z
th (j-mb)
(K/W)
1
0.2
0.1
10
-1
0.05
0.02
10
-2
single shot
10
-3
10
-6
t
p
P
003aac479
δ = 0.5
δ=
t
p
T
t
T
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
1
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
10. Characteristics
Table 7.
Symbol
V
(BR)DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
Fig. 10; Fig. 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
Fig. 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
Fig. 10
I
DSS
drain leakage current
V
DS
= 75 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 75 V; V
GS
= 0 V; T
j
= 175 °C
I
GSS
gate leakage current
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 20 A; T
j
= 175 °C;
Fig. 12; Fig. 13
V
GS
= 10 V; I
D
= 20 A; T
j
= 25 °C;
Fig. 12; Fig. 13
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
BUK7Y18-75B
Min
75
68
2
-
1
-
-
-
-
-
-
Typ
-
-
3
-
-
0.02
-
2
2
-
13.8
Max
-
-
4
4.4
-
1
500
100
100
43.2
18
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
Static characteristics
V
GS(th)
total gate charge
gate-source charge
gate-drain charge
I
D
= 20 A; V
DS
= 60 V; V
GS
= 10 V;
Fig. 14
-
-
-
35
8.28
14.24
-
-
-
nC
nC
nC
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© NXP B.V. 2013. All rights reserved
Product data sheet
1 March 2013
5 / 13
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