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SB330

Description
3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size164KB,2 Pages
ManufacturerDAESAN
Websitehttp://www.diodelink.com
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SB330 Overview

3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD

SB330 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-2
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage30 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current80 A
SB320 THRU SB3100
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250℃/10 seconds at terminals,
0.375" (9.5mm) lead length, 5lbs. (2.3Kg) tension
CURRENT 3.0Amperes
VOLTAGE 20 to 100 Volts
DO-201AD
0.210(5.3)
0.188(4.8)
DIA.
1.0(25.4)
MIN.
0.375(9.5)
0.285(7.2)
Mechanical Data
· Case : JEDEC DO-201AD molded plastic body
· Terminals : Plated axial leads, solderable per
MIL-STD-750, Method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.041 ounce, 1.15 gram
0.042(1.1)
0.037(0.9)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking Voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length(see Fig. 1)
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 3.0A (Note 1)
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
Typical junction capacitance (Note 3)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
T
A
=25℃
T
A
=100℃
I
R
C
J
JA
JL
T
J
T
STG
-55 to +125
-55 to +150
20
250
40.0
10.0
-55 to +150
V
RRM
V
RMS
V
DC
I(
AV
)
SB320
20
14
20
SB330
SB340
40
28
40
SB350
50
35
50
3.0
SB360
SB380 SB3100 Units
80
56
80
100
70
100
Volts
Volts
Volts
Amps
30
21
30
60
42
60
I
FSM
80.0
Amps
V
F
0.55
3.0
0.58
0.85
Volts
10
160
mA
P
F
℃/W
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to lead vrtical P.C.B. mounted, 0.5"(12.7mm) lead length
with 2.5X2.5"(63.5X63.5mm) copper pads
(3) Measured 1MHz and reverse voltage of 4.0 volts

SB330 Related Products

SB330 SB3100 SB320 SB340 SB350 SB380
Description 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, BRIDGE RECTIFIER DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD POWER CONNECTOR 3 A, 80 V, SILICON, RECTIFIER DIODE, DO-201AD
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