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SCD5818H

Description
Schottky Barrier Diode
CategoryDiscrete semiconductor    diode   
File Size35KB,2 Pages
ManufacturerZOWIE Technology Corporation
Websitehttp://www.zowie.com.tw/
Download Datasheet Parametric Compare View All

SCD5818H Overview

Schottky Barrier Diode

SCD5818H Parametric

Parameter NameAttribute value
MakerZOWIE Technology Corporation
Reach Compliance Codeunknow
ECCN codeEAR99
ZOWIE
SCD5817H THRU SCD5819H
FEATURES
*
*
*
*
*
*
*
Halogen - free type
Lead free product , compliance to RoHs
Lead less chip form , no lead damage
Lead-free solder joint , no wire bond & lead frame
Low power loss , High efficiency
High current capability , low VF
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Schottky Barrier Diode
(20V~40V/1.0A)
OUTLINE DIMENSIONS
Case : SCD-2010
4.5 ± 0.1
2.20 ± 0.1
Unit : mm
0.05
0
0. 5
0.95 ± 0.2
0.95 ± 0.2
APPLICATION
*
*
*
*
*
Switching mode power supply applications
Portable equipment battery applications
High frequency rectification
DC / DC Converter
Telecommunication
+ 0.2
0.96
- 0.1
JEDEC : SMA
DO-214AC
MECHANICAL DATA
Case :
Packed with FRP substrate and epoxy underfilled
Terminals :
Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity :
Laser Cathode band marking
Weight :
0.02 gram
MARKING
Cathode mark
5817 = 20V
5818 = 30V
5819 = 40V
58
.
Halogen - free type
Voltage class
PACKING
*
3,000 pieces per 7" (178mm ± 2mm) reel
*
4 reels per box
*
6 boxes per carton
Absolute Maximum Ratings (Ta = 25 C)
Rating
ITEM
Repetitive peak reverse voltage
Average forward current
Peak forward surge current
Operating junction temperature Range
Storage temperature Range
o
Symbol
V
RRM
I
F(AV)
I
FSM
T
j
T
STG
o
Conditions
SCD5817H
20
SCD5818H
30
1.0
SCD5819H
40
Unit
V
A
A
o
o
8.3ms single half sine-wave
30
-55 to +125
-55 to +150
C
C
Electrical characteristics (Ta = 25 C)
ITEM
Symbol
Conditions
I
F
= 1.0A
I
F
= 3.0A
Forward voltage (NOTE 1)
V
F
I
F
= 1.0A
I
F
= 3.0A
I
F
= 1.0A
I
F
= 3.0A
Repetitive peak reverse current
Junction capacitance
Thermal resistance
I
RRM
C
j
R
th(JA)
R
th(JL)
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas.
Type
SCD5817H
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
0.43
0.58
0.48
0.70
0.48
0.70
0.008
110
80
28
Max.
0.45
0.75
0.55
0.875
0.60
0.90
0.50
-
-
-
Unit
V
SCD5818H
V
SCD5819H
V
V
R
= Max. V
RRM
, Ta = 25 C
V
R
= 4V, f = 1.0 MHz
Junction to ambient (NOTE 2)
Junction to lead (NOTE 2)
o
mA
pF
o
o
C/W
C/W
REV. 0
2007/12

SCD5818H Related Products

SCD5818H SCD5817H SCD5819H
Description Schottky Barrier Diode Schottky Barrier Diode Schottky Barrier Diode
Maker ZOWIE Technology Corporation ZOWIE Technology Corporation ZOWIE Technology Corporation
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99

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