ZOWIE
SCD5817H THRU SCD5819H
FEATURES
*
*
*
*
*
*
*
Halogen - free type
Lead free product , compliance to RoHs
Lead less chip form , no lead damage
Lead-free solder joint , no wire bond & lead frame
Low power loss , High efficiency
High current capability , low VF
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Schottky Barrier Diode
(20V~40V/1.0A)
OUTLINE DIMENSIONS
Case : SCD-2010
4.5 ± 0.1
2.20 ± 0.1
Unit : mm
0.05
0
0. 5
0.95 ± 0.2
0.95 ± 0.2
APPLICATION
*
*
*
*
*
Switching mode power supply applications
Portable equipment battery applications
High frequency rectification
DC / DC Converter
Telecommunication
+ 0.2
0.96
- 0.1
JEDEC : SMA
DO-214AC
MECHANICAL DATA
Case :
Packed with FRP substrate and epoxy underfilled
Terminals :
Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity :
Laser Cathode band marking
Weight :
0.02 gram
MARKING
Cathode mark
5817 = 20V
5818 = 30V
5819 = 40V
58
.
Halogen - free type
Voltage class
PACKING
*
3,000 pieces per 7" (178mm ± 2mm) reel
*
4 reels per box
*
6 boxes per carton
Absolute Maximum Ratings (Ta = 25 C)
Rating
ITEM
Repetitive peak reverse voltage
Average forward current
Peak forward surge current
Operating junction temperature Range
Storage temperature Range
o
Symbol
V
RRM
I
F(AV)
I
FSM
T
j
T
STG
o
Conditions
SCD5817H
20
SCD5818H
30
1.0
SCD5819H
40
Unit
V
A
A
o
o
8.3ms single half sine-wave
30
-55 to +125
-55 to +150
C
C
Electrical characteristics (Ta = 25 C)
ITEM
Symbol
Conditions
I
F
= 1.0A
I
F
= 3.0A
Forward voltage (NOTE 1)
V
F
I
F
= 1.0A
I
F
= 3.0A
I
F
= 1.0A
I
F
= 3.0A
Repetitive peak reverse current
Junction capacitance
Thermal resistance
I
RRM
C
j
R
th(JA)
R
th(JL)
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas.
Type
SCD5817H
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
0.43
0.58
0.48
0.70
0.48
0.70
0.008
110
80
28
Max.
0.45
0.75
0.55
0.875
0.60
0.90
0.50
-
-
-
Unit
V
SCD5818H
V
SCD5819H
V
V
R
= Max. V
RRM
, Ta = 25 C
V
R
= 4V, f = 1.0 MHz
Junction to ambient (NOTE 2)
Junction to lead (NOTE 2)
o
mA
pF
o
o
C/W
C/W
REV. 0
2007/12
ZOWIE
SCD5817H THRU SCD5819H
(20V~40V/1.0A)
FIG.1 - FORWARD CURRENT DERATING CURVE
1.0
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
30
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
8.3ms Single Half Sine-Wave
(JEDEC Method)
25
Single Phase Half Wave
60HZ Resistive or Inductive
20
0.5
15
10
5
0
0
70
80
90
100
110
o
0
120
130
1
10
NUMBER OF CYCLES AT 60Hz
100
LEAD TEMPERATURE, C
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10.00
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
INSTANTANEOUS REVERSE CURRENT, ( mA )
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
1.00
1.0
T
J
=125 C
o
SCD5817H
SCD5818H & SCD5819H
0.10
0.10
0.01
T
J
=25 C
o
0.01
0
0.2
0.4
T
J
=25 C
o
.001
0.6
0.8
1.0
1.2
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
400
JUNCTION CAPACITANCE, pF
T
J
=25 C
o
100
10
.1
1.0
4
10
100
REVERSE VOLTAGE, VOLTS
REV. 0
2007/12
FPGA/CPLD
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