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DAN217

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size129KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Download Datasheet Parametric View All

DAN217 Overview

Rectifier Diode,

DAN217 Parametric

Parameter NameAttribute value
MakerGalaxy Semi-Conductor Co., Ltd.
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Base Number Matches1
BL
Galaxy Electrical
Surface mount switching diode
FEATURES
Small surface mounting type.(UMD3,SMD3)
Production specification
DAN217
Pb
Two diode elements are connected in series. Lead-free
APPLICATIONS
High speed switching application.
SOT-23
ORDERING INFORMATION
Type No.
DAN217
Marking
BA1
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Characteristic
Peak Reverse Voltage
DC Reverse Voltage
Maximum (peak)forward Current
Forward Continuous Current
Surge Current (10ms)
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
RM
V
R
I
FM
I
o
I
FSM
P
d
T
j
T
STG
Limits
80
80
300
100
1000
150
125
-55 to +125
Unit
V
V
mA
mA
mA
mW
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Symbol
V
(BR)R
V
F
I
R
Min
80
1.2
0.1
MAX
UNIT
V
V
μA
Test Condition
I
R
= 100μA
I
F
=100mA
V
R
=70V
Document number: BL/SSSDC047
Rev.A
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