HY62UT08081E-DP85E datasheet, PDF

HY62UT08081E-DP85E: DescriptionStandard SRAM, 32KX8, 85ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28; Categorystorage storage; File Size269KB，11 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HY62UT08081E-DP85E Overview

Standard SRAM, 32KX8, 85ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28

Parameter Name	Attribute value
Maker	SK Hynix
Parts packaging code	DIP
package instruction	DIP, DIP28,.6
Contacts	28
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	85 ns
I/O type	COMMON
JESD-30 code	R-PDIP-T28
length	37 mm
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	32KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	3 V
Certification status	Not Qualified
Maximum seat height	4.826 mm
Minimum standby current	2 V
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.3 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	NO
technology	CMOS
Temperature level	OTHER
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	15.24 mm

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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