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ZVN0545A

Description
90 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size14KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZVN0545A Overview

90 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

ZVN0545A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionTO-92 COMPATIBLE, E-LINE PACKAGE-3
Reach Compliance Code_compli
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage450 V
Maximum drain current (Abs) (ID)0.09 A
Maximum drain current (ID)0.09 A
Maximum drain-source on-resistance50 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)4 pF
JESD-30 codeO-PBCY-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN0545A
ISSUE 2 – MARCH 94
FEATURES
* 450 Volts V
DS
* R
DS(on)
= 50Ω
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
V
DS
SYMBOL
VALUE
450
90
600
±
20
700
-55 to +150
UNIT
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward
Transconductance(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
450
1
3
20
10
400
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
100
70
10
4
7
7
16
10
150
50
MAX. UNIT CONDITIONS.
V
V
nA
µA
µA
mA
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈25V,
I
D
=100mA
V
DS
=25 V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=450 V, V
GS
=0
V
DS
=405 V, V
GS
=0V,
T=125°C
(2)
V
DS
=25 V, V
GS
=10V
V
GS
=10V,I
D
=100mA
V
DS
=25V,I
D
=100mA
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