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SF34

Description
3 A, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size82KB,3 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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3 A, SILICON, RECTIFIER DIODE, DO-201AD

Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
SF31
THRU
SF38
3.0 Amp Super Fast
Rectifier
50 to 600 Volts
DO-201AD
Features
High Surge Capability
Low Forward Voltage Drop
High Current Capability
High Reliability
Maximum Ratings
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
For capacitive load, derate current by 20%
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
150V
200V
300V
400V
600V
Maximum
RMS Voltage
35V
70V
105V
140V
210V
280V
420V
Maximum DC
Blocking
Voltage
D
Part Number
SF31
SF32
SF33
SF34
SF35
SF36
SF38
50V
100V
150V
200V
300V
400V
600V
A
Cathode
Mark
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
3.0 A
T
C
= 55°C
Current
Peak Forward Surge
I
FSM
100A
8.3ms, half sine
Current
Maximum
Instantaneous
Forward Voltage
I
FM
= 3.0A;
V
F
.95V
SF31-SF34
1.3V
SF35-SF36
T
C
= 25°C
1.7V
SF38
Maximum DC
I
R
Reverse Current At
5.0µA
T
C
= 25°C
Rated DC Blocking
100µA T
C
= 100°C
Voltage
Typical Junction
Capacitance
C
J
SF31-SF34
100pF Measured at
1.0MHz, V
R
=4.0V
SF35-SF38
80pF
Maximum Reverse
I
F
=0.5A, I
R
=1.0A,
T
rr
35ns
Recovery Time
I
rr
=0.25A
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
C
DIMENSIONS
INCHES
MIN
MAX
---
.370
---
.250
.048
.052
1.000
---
MM
MIN
---
---
1.20
25.40
MAX
9.50
6.40
1.30
---
NOTE
DIM
A
B
C
D
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Description 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 150 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD
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