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SF35

Description
3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size35KB,2 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
Download Datasheet Parametric Compare View All

SF35 Overview

3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD

SF35 Parametric

Parameter NameAttribute value
MakerHY Electronic
package instructionO-PALF-W2
Reach Compliance Codeunknow
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-27
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage300 V
Maximum reverse current5 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
SF31 thru SF38
SUPERFAST RECOVERY RECTIFIERS
REVERSE VOLTAGE
- 50
to
600
Volts
FORWARD CURRENT
- 3.0
Amperes
DO- 27
FEATURES
Super fast switching time for high efficiency
Low forward voltage drop and
high current capabiltiy
Low reverse leakage current
Plastic material has UL flammability
.052(1.3)
.048(1.2) DIA.
1.0(25.4)
MI
classification 94V-0
.375(9.5)
.335(8.5)
210
MECHANICAL DATA
Case: JEDEC DO-27 molded plastic
Polarity: Color band denotes cathode
Weight: 0.04 ounces , 1.1 grams
Mounting position: Any
.220(5.6)
.197(5.0) DIA.
1.0(25.4)
MI
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 3.0A DC(Note1)
Maximum DC Reverse Current
at Rated DC Bolcking Voltage
@T
J
=25℃
@T
J
=100℃
@T
A
=55
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
SF31
50
35
50
SF32
100
70
100
SF33
150
105
150
SF34
200
140
200
3.0
SF35
300
210
300
SF36
400
280
400
SF38
600
420
600
UNIT
V
V
V
A
I
FSM
V
F
I
R
Trr
C
J
R
θJA
T
J
T
STG
70
0.95
125
1.25
5.0
100
35
45
20
-55 to +125
-55 to +150
A
V
uA
nS
pF
℃/W
Maximum Reverse Recovery Time(Note 1)
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1.Measured with I
F
=0.5A,I
R
=1A,I
RR
=0.25A.
2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
3.Thermal resistance junction to ambient,
~ 129 ~

SF35 Related Products

SF35 SF32 SF31 SF33 SF34 SF36 SF38
Description 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 150 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD
Maker HY Electronic HY Electronic HY Electronic HY Electronic HY Electronic HY Electronic HY Electronic
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknow unknown unknow unknown unknow unknown unknow
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 0.95 V 0.95 V 0.95 V 0.95 V 1.3 V 1.7 V
JEDEC-95 code DO-27 DO-27 DO-27 DO-27 DO-27 DO-27 DO-27
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 125 A 125 A 125 A 125 A 125 A 125 A 125 A
Number of components 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 300 V 100 V 50 V 150 V 200 V 400 V 600 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
Maximum reverse recovery time 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.035 µs
surface mount NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
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