BTW43-1000H datasheet, PDF - EEWORLD Datasheet

BTW43-1000H: DescriptionTRIAC, 1000V V(DRM), 12A I(T)RMS,; CategoryAnalog mixed-signal IC Trigger device; File Size355KB，7 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BTW43-1000H Overview

TRIAC, 1000V V(DRM), 12A I(T)RMS,

Parameter Name	Attribute value
Maker	Philips Semiconductors (NXP Semiconductors N.V.)
package instruction	,
Reach Compliance Code	unknown
Critical rise rate of commutation voltage - minimum value	10 V/us
Critical rise rate of minimum off-state voltage	200 V/us
Maximum DC gate trigger current	100 mA
Maximum DC gate trigger voltage	2.5 V
Maximum holding current	100 mA
Maximum leakage current	5 mA
Maximum on-state voltage	2.2 V
Maximum operating temperature	125 °C
Maximum rms on-state current	12 A
Off-state repetitive peak voltage	1000 V
surface mount	NO
Trigger device type	TRIAC

	BTW43-1000H	BTW43-600H	BTW43-1000G	BTW43-600G
Description	TRIAC, 1000V V(DRM), 12A I(T)RMS,	TRIAC, 600V V(DRM), 12A I(T)RMS,	TRIAC, 1000V V(DRM), 12A I(T)RMS,	TRIAC, 600V V(DRM), 12A I(T)RMS,
Maker	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code	unknown	unknown	unknown	unknown
Critical rise rate of commutation voltage - minimum value	10 V/us	10 V/us	10 V/us	10 V/us
Critical rise rate of minimum off-state voltage	200 V/us	200 V/us	200 V/us	200 V/us
Maximum DC gate trigger current	100 mA	100 mA	100 mA	100 mA
Maximum DC gate trigger voltage	2.5 V	2.5 V	2.5 V	2.5 V
Maximum holding current	100 mA	100 mA	100 mA	100 mA
Maximum leakage current	5 mA	5 mA	5 mA	5 mA
Maximum on-state voltage	2.2 V	2.2 V	2.2 V	2.2 V
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Maximum rms on-state current	12 A	12 A	12 A	12 A
Off-state repetitive peak voltage	1000 V	600 V	1000 V	600 V
surface mount	NO	NO	NO	NO
Trigger device type	TRIAC	TRIAC	TRIAC	TRIAC

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