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BCR12KM-12LB
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Viso
Ratings
12
120
60
5
0.5
10
2
– 40 to +150
– 40 to +150
2.0
2000
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 102°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T
1
·T
2
·G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Symbol
I
DRM
V
TM
V
FGT
Ι
V
RGT
Ι
V
RGT
ΙΙΙ
I
FGT
Ι
I
RGT
Ι
I
RGT
ΙΙΙ
V
GD
R
th (j-c)
(dv/dt)c
Minimum
Characteristics Value
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
10/1
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
30
Note5
30
Note5
30
Note5
—
3.3
—
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Tj = 150°C, V
DRM
applied
Tc = 25°C, I
TM
= 20 A,
Instantaneous measurement
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Unit
Test conditions
Gate trigger current
Note2
Gate non-trigger voltage
Tj = 125°C/150°C, V
D
= 1/2 V
DRM
Thermal resistance
Junction to case
Note3
Critical-rate of rise of off-state
Tj = 125°C/150°C
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (I
GT
≤
20 mA) is also available. (I
GT
item: 1)
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 6 A/ms
3. Peak off-state voltage
V
D
= 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Main Current
Main Voltage
(dv/dt)c
Rev.1.00, Aug.20.2004, page 2 of 7
BCR12KM-12LB
Performance Curves
Maximum On-State Characteristics
10
2
7
5
200
Rated Surge On-State Current
Surge On-State Current (A)
180
160
140
120
100
80
60
40
20
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State Current (A)
3
2
10
1
7
5
3
2
10
0
7
5
0.5
1.0
Tj = 150°C
Tj = 25°C
1.5
2
2.5
3.0
3.5
4.0
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
5
3
2
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
Typical Example
V
GM
= 10V
P
GM
= 5W
P
G(AV)
=
0.5W
I
GM
= 2A
Gate Voltage (V)
10
1
7
5
3
V
GT
= 1.5V
2
10
0
7
5
3
2
I
RGT I
, I
RGT III
I
FGT I
10
–1
I
RGT I
I
FGT I
, I
RGT III
V
GD
= 0.1V
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
2 3 5 7 10
3
2 3 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
Typical Example
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
Rev.1.00, Aug.20.2004, page 3 of 7
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