ZTX953 datasheet, PDF - EEWORLD Datasheet

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ZTX953: Description3.5 A, 100 V, PNP, Si, POWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size63KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZTX953 Overview

3.5 A, 100 V, PNP, Si, POWER TRANSISTOR

ZTX953 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	TO-92 COMPATIBLE, 3 PIN
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	3.5 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	125 MHz
VCEsat-Max	0.33 V

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ZTX953

MAX.

-1100

300

IC=-4A, V

=-1V*

UNIT

CONDITIONS.

PNP SILICON PLANAR MEDIUM POWER

HIGH CURRENT TRANSISTOR

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER

SYMBOL

MIN.

TYP.

Base-Emitter

Turn-On Voltage

=-10mA, V

=-1V*

=-1A, V

=-1V*

=-3A, V

=-1V*

=-4A, V

=-1V*

=-10A, V

=-1V*

MHz

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

MAX.

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

150

°C/W

UNIT

Practical Power Dissipation*

CBO

CEO

EBO

totp

tot

stg

SYMBOL

=-2A, I

=-200mA

=200mA, V

=-10V

=-10V, f=1MHz

BE(on)

-880

Static Forward

Current Transfer

ISSUE 4 JUNE 94

FEATURES

* 3.5 Amps continuous current

* Up to 10 Amps peak current

* Very low saturation voltage

* Excellent gain up to 10 Amps

* Spice model available

100

200

Transition Frequency

125

ABSOLUTE MAXIMUM RATINGS.

-140

-100

-6

-10

-3.5

1.58

1.2

E-Line

TO92 Compatible

VALUE

UNIT

-55 to +200

°C

=-100mA, V

=-10V

f=50MHz

Output Capacitance

obo

Switching Times

off

110

460

*Measured under pulsed conditions. Pulse width=300

s. Duty cycle

≤

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

Thermal Resistance: Junction to Ambient

Junction to Case

th(j-amb)

th(j-case)

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

PARAMETER

Collector-Base Breakdown

Voltage

D.C.

SYMBOL

(BR)CBO

(BR)CER

(BR)CEO

MIN.

-140

TYP.

-170

MAX.

UNIT

CONDITIONS.

=-100

IC=-1

A, RB

≤

Ω

-100

-120

=-10mA*

4.0

D=t

150

Collector-Emitter Breakdown

Voltag

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

3.0

D=0.6

100

2.0

D=0.2

D=0.1

D=0.05

Single Pulse

(BR)EBO

CBO

Collector Cut-Off Current

CER

≤

Ω

-6

-8

-50

-1

=-100

=-100V

=-100V, T

amb

=100°C

1.0

Max Power Dissipation - (Watts)

-40 -20

Thermal Resistance (°C/W)

Amb

ient t

emp

eratu

0.001

0.01

0.1

100

20 40

60 80 100 120 140 160 180 200

0.0001

T -Temperature

(°C)

Pulse Width (seconds)

-50

-1

Emitter Cut-Off Current

Collector-Emitter Saturation

Voltage

EBO

CE(sat)

-20

-80

-140

-250

Base-Emitter

Saturation Voltage

BE(sat)

3-318

-960

-10

-50

-100

-170

-330

-1100

=-100V

=-100V, T

amb

=100°C

=-6V

=-100mA, I

=-10mA*

=-1A, I

=-100mA*

=-2A, I

=-200mA*

=-4A, I

=-400mA*

=-4A, I

=-400mA*

Derating curve

Maximum transient thermal impedance

3-319

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