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ZTX855

Description
NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size71KB,3 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZTX855 Overview

NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR

ZTX855 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionIN-LINE, R-PSIP-W3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)4 A
Collector-emitter maximum voltage150 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)90 MHz
VCEsat-Max0.26 V
ZTX855
ZTX855
MAX.
1
300
MHz
pF
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
MAX.
Practical Power Dissipation*
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
150
50
°C/W
°C/W
UNIT
Continuous Collector Current
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
T
j
:Tstg
ns
ns
I
C
=1A, I
B!
=100mA
I
B2
=100mA, V
CC
=50V
V
CB
=20V, f=1MHz
I
C
=100mA, V
CE
=10V
f=50MHz
V
IC=4A, V
CE
=5V*
UNIT
CONDITIONS.
NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
Base-Emitter
Turn-On Voltage
I
C
=10mA, V
CE
=5V
I
C
=1A, V
CE
=5V*
I
C
=4A, V
CE
=5V*
I
C
=10A, V
CE
=5V*
V
BE(on)
0.88
h
FE
Static Forward
Current Transfer
Ratio
100
100
35
200
200
55
10
ISSUE 2 – MARCH 94
FEATURES
* 150 Volt V
CEO
* 4 Amps continuous current
* Up to 10 Amps peak current
* Very low saturation voltage
* P
tot
= 1.2 Watt
C
B
E
Transition Frequency
f
T
90
Output Capacitance
C
obo
22
ABSOLUTE MAXIMUM RATINGS.
SYMBOL
250
150
6
10
4
1.58
1.2
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
W
-55 to +200
°C
Switching Times
t
on
t
off
66
2130
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance: Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown
Voltage
D.C.
SYMBOL
V
(BR)CBO
V
(BR)CER
MIN.
250
250
TYP.
375
375
MAX.
UNIT
V
V
CONDITIONS.
I
C
=100
µ
A
IC=1
µ
A, RB
1K
V
(BR)CEO
150
180
V
I
C
=10mA*
4.0
t
1
D=t
1
/t
P
150
Collector-Emitter Breakdown
Voltag
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
3.0
t
P
D=0.6
Ca
se
100
te
2.0
m
pe
ra
tu
re
D=0.2
D=0.1
D=0.05
Single Pulse
V
(BR)EBO
I
CBO
Collector Cut-Off Current
6
8
50
1
V
nA
µ
A
I
E
=100
µ
A
V
CB
=200V
V
CB
=200V, T
amb
=100°C
50
1.0
Max Power Dissipation - (Watts)
-40 -20
0
Thermal Resistance (°C/W)
Amb
ient t
emp
eratu
0.001
0.01
0.1
1
10
100
re
20 40
60 80 100 120 140 160 180 200
0
0.0001
nA
I
CER
R
1K
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
I
EBO
V
CE(sat)
20
35
60
210
Base-Emitter
Saturation Voltage
V
BE(sat)
2-300
960
µ
A
T -Temperature
(°C)
Pulse Width (seconds)
50
1
10
40
60
100
260
1100
V
CB
=200V
V
CB
=200V, T
amb
=100°C
nA
mV
mV
mV
mV
mV
V
EB
=6V
I
C
=100mA, I
B
=5mA*
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=4A, I
B
=400mA*
I
C
=4A, I
B
=400mA*
Derating curve
Maximum transient thermal impedance
3-301
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