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ZTX752

Description
2000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size59KB,3 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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ZTX752 Overview

2000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

ZTX752 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionCYLINDRICAL, O-PBCY-W3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-based maximum capacity30 pF
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power consumption environment2.5 W
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)140 MHz
VCEsat-Max0.5 V
ZTX752
ZTX753
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ZTX752
ZTX753
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
MAX.
MHz
ns
ns
30
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
MAX.
175
116
70
PARAMETER
Collector-Base
Breakdown
Voltage
°C/W
°C/W
°C/W
UNIT
Power Dissipation
at T
amb
=25°C
derate above 25°C
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
pF
V
CB
=10V f=1MHz
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
I
C
=-100mA, V
CE
=-5V
f=100MHz
UNIT CONDITIONS.
PARAMETER
SYMBOL
ZTX752
ZTX753
MIN. TYP.
140
40
600
MAX. MIN. TYP.
Transition
Frequency
f
T
100
140
100
ISSUE 2 – JULY 94
FEATURES
* 100 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
* P
tot
=1 Watt
C
B
E
Switching Times
t
on
40
t
off
600
Output
Capacitance
C
obo
30
ABSOLUTE MAXIMUM RATINGS.
SYMBOL
ZTX752
-100
-80
-5
-6
-2
1
5.7
E-Line
TO92 Compatible
ZTX753
-120
-100
UNIT
V
V
V
A
A
W
mW/°C
-55 to +200
°C
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Operating and Storage Temperature Range
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
†
R
th(j-case)
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
ZTX752
ZTX753
SYMBOL MIN. TYP. MAX. MIN. TYP. MAX. UNIT CONDITIONS.
V
(BR)CBO
-100
-120
V
I
C
=-100
µ
A
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
D=1 (D.C.)
200
V
(BR)CEO
V
(BR)EBO
-80
-5
-100
-5
V
V
I
C
=-10mA*
I
E
=-100
µ
A
2.0
D=t
1
/t
P
t
P
D=0.5
t
1
Collector-Emitter
Breakdown
Voltage
C
as
1.5
e
te
m
pe
1.0
D=0.2
D=0.1
Am
ra
100
Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current
bie
tu
nt t
re
I
CBO
-0.1
-10
I
EBO
Collector-Emitter
V
CE(sat)
Saturation Voltage
Base-Emitter
V
BE(sat)
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.1
-0.17 -0.3
-0.30 -0.5
-0.9
-0.8
-1.25
-1
em
0.5
per
-0.1
-10
Emitter Cut-Off
Current
-0.1
-0.17 -0.3
-0.30 -0.5
-0.9
-0.8
at u
re
0.01
0.1
1
10
100
Thermal Resistance (°C/W)
Single Pulse
µ
A
µ
A
µ
A
µ
A
µ
A
V
CB
=-80V
V
CB
=-100V
V
CB
=-80V,
T
amb
=100°C
V
CB
=-100V,
T
amb
=100°C
V
EB
=-4V
V
V
-1.25 V
-1
V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-1A, I
B
=-100mA*
IC=-1A, V
CE
=-2V*
Max Power Dissi ation - (Watts)
0
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0
0.0001
0.001
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-261
3-260
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