BTW69-400N datasheet, PDF - EEWORLD Datasheet

BTW69-400N: DescriptionSILICON CONTROLLED RECTIFIER,400V V(DRM),25A I(T),TO-218; CategoryAnalog mixed-signal IC Trigger device; File Size204KB，4 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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BTW69-400N Overview

SILICON CONTROLLED RECTIFIER,400V V(DRM),25A I(T),TO-218

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Reach Compliance Code	not_compliant
Nominal circuit commutation break time	100 µs
Critical rise rate of minimum off-state voltage	500 V/us
Maximum DC gate trigger current	80 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	150 mA
JESD-609 code	e0
Maximum leakage current	6 mA
On-state non-repetitive peak current	525 A
Maximum on-state voltage	2 V
Maximum on-state current	25000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-45 °C
Off-state repetitive peak voltage	400 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Trigger device type	SCR

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