ZTX749
ZTX749
MAX.
MHz
100
ns
ns
pF
V
CB
=-10V f=1MHz
I
C
=-100mA,
V
CE
=-5V f=100MHz
UNIT
CONDITIONS.
PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Transition
Frequency
f
T
100
160
ISSUE 1 APRIL 94
FEATURES
* 25 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
C
B
E
Output Cpacitance
C
obo
55
Switching Times
t
on
40
t
off
450
I
C
=-500mA,
V
CC
=-10V
I
B1
=I
B2
=-50mA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j:
T
stg
V
CBO
SYMBOL
E-Line
TO92 Compatible
VALUE
-35
-25
-5
-6
-2
1
5.7
-55 to +200
UNIT
V
V
V
A
A
W
mW/ °C
°C
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
MAX.
175
116
70
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
D=1 (D.C.)
PARAMETER
°C/W
°C/W
°C/W
SYMBOL
UNIT
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(sat)
Collector-Emitter
Saturation Voltage
-0.12
-0.23
Base-Emitter
Saturation Voltage
-0.9
MIN.
-35
-25
-5
TYP.
MAX.
UNIT
V
V
V
CONDITIONS.
I
C
=-100
µ
A, I
E
=0
I
C
=-10mA, I
B
=0*
I
E
=-100
µ
A, I
C
=0
2.5
t
1
D=t
1
/t
P
t
P
D=0.5
200
2.0
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
C
as
1.5
e
te
m
-0.1
-10
-0.1
µ
A
µ
A
µ
A
V
CB
=-30V
V
CB
=-30V,
T
amb
=100°C
V
EB
=-4V, I
E
=0
-0.3
-0.5
-1.25
V
V
V
I
C
=1A, I
B
=-100mA*
I
C
=2A, I
B
=-200mA*
I
C
=1A, I
B
=-100mA*
pe
1.0
D=0.2
D=0.1
Single Pulse
Am
ra
100
bie
tu
nt t
re
em
Max Power Dissipation - (Watts)
0
0.001
0.01
0.1
1
10
-40 -20
0
Thermal Resistance (°C/W)
0.5
per
at u
re
100
20 40
60 80 100 120 140 160 180 200
0
0.0001
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
Base-Emitter
Turn-On Voltage
V
BE(on)
Static Forward Current h
FE
Transfer Ratio
-0.8
-1
V
IC=-1A, V
CE
=-2V*
70
100
75
15
200
200
150
50
300
I
C
=-50mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3-254
3-255
ZTX749
ZTX749
MAX.
MHz
100
ns
ns
pF
V
CB
=-10V f=1MHz
I
C
=-100mA,
V
CE
=-5V f=100MHz
UNIT
CONDITIONS.
PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Transition
Frequency
f
T
100
160
ISSUE 1 APRIL 94
FEATURES
* 25 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
C
B
E
Output Cpacitance
C
obo
55
Switching Times
t
on
40
t
off
450
I
C
=-500mA,
V
CC
=-10V
I
B1
=I
B2
=-50mA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j:
T
stg
V
CBO
SYMBOL
E-Line
TO92 Compatible
VALUE
-35
-25
-5
-6
-2
1
5.7
-55 to +200
UNIT
V
V
V
A
A
W
mW/ °C
°C
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
MAX.
175
116
70
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
D=1 (D.C.)
PARAMETER
°C/W
°C/W
°C/W
SYMBOL
UNIT
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(sat)
Collector-Emitter
Saturation Voltage
-0.12
-0.23
Base-Emitter
Saturation Voltage
-0.9
MIN.
-35
-25
-5
TYP.
MAX.
UNIT
V
V
V
CONDITIONS.
I
C
=-100
µ
A, I
E
=0
I
C
=-10mA, I
B
=0*
I
E
=-100
µ
A, I
C
=0
2.5
t
1
D=t
1
/t
P
t
P
D=0.5
200
2.0
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
C
as
1.5
e
te
m
-0.1
-10
-0.1
µ
A
µ
A
µ
A
V
CB
=-30V
V
CB
=-30V,
T
amb
=100°C
V
EB
=-4V, I
E
=0
-0.3
-0.5
-1.25
V
V
V
I
C
=1A, I
B
=-100mA*
I
C
=2A, I
B
=-200mA*
I
C
=1A, I
B
=-100mA*
pe
1.0
D=0.2
D=0.1
Single Pulse
Am
ra
100
bie
tu
nt t
re
em
Max Power Dissipation - (Watts)
0
0.001
0.01
0.1
1
10
-40 -20
0
Thermal Resistance (°C/W)
0.5
per
at u
re
100
20 40
60 80 100 120 140 160 180 200
0
0.0001
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
Base-Emitter
Turn-On Voltage
V
BE(on)
Static Forward Current h
FE
Transfer Ratio
-0.8
-1
V
IC=-1A, V
CE
=-2V*
70
100
75
15
200
200
150
50
300
I
C
=-50mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3-254
3-255
ZTX749
TYPICAL CHARACTERISTICS
I
B1
=I
B2
=I
C
/10
V
CE
=-10V
1.8
td
tr
tf
ns
1.6
160
1.4
ts
1.2
tf
ts
140
ns
1200 120
1.0
1000 100
0.8
80
I
C
/I
B
=100
tr
td
Switching time
0.6
600
60
V
CE(sat)
- (Volts)
0.4
40
0.2
0.1
1
200
0
I
C
/I
B
=10
20
0.001
0.01
0.1
1
10
0
0.01
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
Switching Speeds
1.2
200
1.0
I
C
/I
B
=10
160
V
CE
=2V
0.8
h
FE
- Gain
120
I
C
/I
B
=100
0.6
V
BE(sat)
- (Volts)
80
0.4
0.001
0.01
1
10
0.1
40
0.001
0.01
0.1
1
10
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
Single Pulse Test at T
amb
=25°C
V
BE(sat)
v I
C
10
1.2
1.0
V
CE
=2V
1.0
0.8
V
BE
- (Volts)
0.6
0.1
D.C.
1s
100ms
10ms
1.0ms
0.001
1
0.01
0.1
1
10
10
100
I
C
- Collector Current (Amps)
0.4
0.01
I
C
-
Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
V
BE(on)
v I
C
Safe Operating Area
3-256
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