ZTX696B
ZTX696B
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
MAX.
UNIT
MHz
PARAMETER
Transition Frequency
SYMBOL
f
T
MIN.
70
TYP.
Input Capacitance
Output Capacitance
Switching Times
C
ibo
C
obo
t
on
t
off
200
6
80
4400
pF
pF
ns
ns
CONDITIONS.
I
C
=50mA, V
CE
=5V
f=50MHz
V
EB
=0.5V, f=1MHz
V
CE
=10V, f=1MHz
I
C
=100mA, I
B!
=10mA
I
B2
=10mA, V
CC
=50V
ISSUE 3 - NOVEMBER 1995
FEATURES
* 180 Volt V
CEO
* Gain of 500 at I
C
=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
* Motor drivers
* Relay / solenoid drivers
C
B
E
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
MAX.
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation *
Power Dissipation at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
UNIT
Emitter-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
T
j
:T
stg
ABSOLUTE MAXIMUM RATINGS.
SYMBOL
180
180
5
1
0.5
1.5
1
5.7
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
W
mW/°C
-55 to +200
°C
THERMAL CHARACTERISTICS
175
116
70
°C/W
°C/W
°C/W
PARAMETER
SYMBOL
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
500
150
3-247
MIN.
180
180
5
0.1
0.1
0.2
0.2
0.25
0.9
0.9
TYP.
MAX.
UNIT
V
V
V
µ
A
µ
A
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=145V
V
EB
=4V
V
V
V
V
V
I
C
=50mA, I
B
=0.5mA*
I
C
=100mA, I
B
=2mA*
I
C
=200mA, I
B
=5mA*
I
C
=200mA, I
B
=5mA*
I
C
=200mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=5V*
3-248
ZTX696B
ZTX696B
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
MAX.
UNIT
MHz
PARAMETER
Transition Frequency
SYMBOL
f
T
MIN.
70
TYP.
Input Capacitance
Output Capacitance
Switching Times
C
ibo
C
obo
t
on
t
off
200
6
80
4400
pF
pF
ns
ns
CONDITIONS.
I
C
=50mA, V
CE
=5V
f=50MHz
V
EB
=0.5V, f=1MHz
V
CE
=10V, f=1MHz
I
C
=100mA, I
B!
=10mA
I
B2
=10mA, V
CC
=50V
ISSUE 3 - NOVEMBER 1995
FEATURES
* 180 Volt V
CEO
* Gain of 500 at I
C
=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
* Motor drivers
* Relay / solenoid drivers
C
B
E
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
MAX.
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation *
Power Dissipation at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
UNIT
Emitter-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
T
j
:T
stg
ABSOLUTE MAXIMUM RATINGS.
SYMBOL
180
180
5
1
0.5
1.5
1
5.7
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
W
mW/°C
-55 to +200
°C
THERMAL CHARACTERISTICS
175
116
70
°C/W
°C/W
°C/W
PARAMETER
SYMBOL
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
500
150
3-247
MIN.
180
180
5
0.1
0.1
0.2
0.2
0.25
0.9
0.9
TYP.
MAX.
UNIT
V
V
V
µ
A
µ
A
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=145V
V
EB
=4V
V
V
V
V
V
I
C
=50mA, I
B
=0.5mA*
I
C
=100mA, I
B
=2mA*
I
C
=200mA, I
B
=5mA*
I
C
=200mA, I
B
=5mA*
I
C
=200mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=5V*
3-248
ZTX696B
TYPICAL CHARACTERISTICS
I
C
/I
B
=50
T
amb
=25°C
-55°C
+25°C
+100°C
+175°C
0.8
I
C
/I
B
=100
I
C
/I
B
=50
I
C
/I
B
=10
0.8
0.6
0.6
V
CE(sat)
- (Volts)
0.2
V
CE(sat)
- (Volts)
0.4
0.4
0.2
0
0.01
0.1
1
10
0.01
0.1
1
10
0
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
V
CE(sat)
v I
C
1.6
I
C
/I
B
=50
V
CE
=5V
-55°C
+25°C
+100°C
+175°C
1.4
+100°C
+25°C
-55°C
1.5K
1.6
1.2
1.4
1.0
1.2
1K
0.8
1.0
0.6
0.8
500
V
BE(sat)
- (Volts)
0.4
0.6
h
FE
- Normalised Gain
0.2
h
FE
- Typical Gain
0.4
0.2
0.01
0.1
1
10
0
0
0.01
0.1
1
10
0
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
Single Pulse Test at T
amb
=25°C
V
BE(sat)
v I
C
1
V
CE
=5V
1.6
1.4
-55°C
+25°C
+100°C
+175°C
0.1
1.2
1.0
V
BE
- (Volts)
0.8
0.6
0.01
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.4
0
1
10
0
I
C
- Collector Current (Amps)
0.2
0.01
0.1
1
10
0.001
100
1000
I
C
-
Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
V
BE(on)
v I
C
Safe Operating Area
3-249
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