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BCX70JLT1

Description
200mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, CASE 318-08, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size217KB,12 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BCX70JLT1 Overview

200mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, CASE 318-08, 3 PIN

BCX70JLT1 Parametric

Parameter NameAttribute value
MakerON Semiconductor
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging codeCASE 318-08
Reach Compliance Codeunknown
ECCN codeEAR99
ON Semiconductort
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
45
5.0
200
Unit
Vdc
Vdc
BCX70GLT1
BCX70JLT1
BCX70KLT1
3
Vdc
mAdc
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5
T
A
= 25°C
Derate above 25°C
Board
(1)
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236)
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
COLLECTOR
3
DEVICE MARKING
BCX70GLT1 = AG; BCX70JLT1 = AJ; BCX70KLT1 = AK
2
EMITTER
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 2.0 mAdc, I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 1.0
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CE
= 32 Vdc)
(V
CE
= 32 Vdc, T
A
= 150°C)
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
1. FR–5 = 1.0

0.75

0.062 in.
2. Alumina = 0.4

0.3

0.024 in. 99.5% alumina.
V
(BR)CEO
V
(BR)EBO
I
CES
I
EBO
20
20
20
nAdc
mAdc
nAdc
45
5.0
Vdc
Vdc
©
Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 1
Publication Order Number:
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