ZTX601 datasheet, PDF - EEWORLD Datasheet

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ZTX601: DescriptionNPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS; CategoryDiscrete semiconductor The transistor; File Size67KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZTX601 Overview

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

ZTX601 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-based maximum capacity	15 pF
Collector-emitter maximum voltage	160 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	1000
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power consumption environment	2.5 W
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
Guideline	CECC
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
VCEsat-Max	1.2 V

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ZTX600

ZTX601

NPN SILICON PLANAR MEDIUM POWER

DARLINGTON TRANSISTORS

ZTX600

ZTX601

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

ZTX601

UNIT CONDITIONS.

MAX.

100K

20K

100K

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation

at T

amb

=25°C

derate above 25°C

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

MHz

90

15

µ

s

µ

s

PARAMETER

SYMBOL

ZTX600

MIN. TYP.

I

C

=50mA, V

CE

=10V*

I

C

=0.5A, V

CE

=10V*

I

C

=1A, V

CE

=10V*

I

C

=50mA, V

CE

=10V*

I

C

=0.5A, V

CE

=10V*

I

C

=1A, V

CE

=10V*

MAX. MIN. TYP.

Static Forward

Current Transfer

Ratio

2K

5K

3K

h

FE

1K

2K

1K

100K 2K

1K

ISSUE 2 JUNE 94

FEATURES

* 160 Volt V

CEO

* 1 Amp continuous current

* Gain of 5K at I

C

=1 Amp

* P

tot

= 1 Watt

C

B

E

Group A

1K

2K

1K

2K

5K

3K

20K

1K

2K

1K

Group B

250

60

10

0.75

2.2

I

C

=0.5A, V

CE

=10V

I

B1

=I

B2

=0.5mA

pF

V

CE

=10V, f=1MHz

pF

V

EB

=0.5V, f=1MHz

ABSOLUTE MAXIMUM RATINGS.

SYMBOL

ZTX600

160

140

10

4

1

5.7

E-Line

TO92 Compatible

ZTX601

180

160

UNIT

V

A

W

mW/ °C

-55 to +200

°C

5K

10K

5K

I

C

=100mA,

V

CE

=10V f=20MHz

10K

20K

10K

5K

100K 10K

5K

10K

20K

10K

I

C

=50mA, V

CE

=10V*

I

C

=0.5A, V

CE

=10V*

I

C

=1A, V

CE

=10V*

Transition

Frequency

f

T

150

250

150

Input Capacitance

C

ibo

60

90

Output

Capacitance

C

obo

10

15

Switching Times

t

on

0.75

t

off

2.2

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

PARAMETER

Operating and Storage Temperature Range

1.0

R

5

= 50KΩ

R

5

= 5KΩ

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

SYMBOL

160

140

10

Emitter-Base

V

(BR)EBO

Breakdown Voltage

Collector Cut-Off

Current

I

CBO

0.01

10

Emitter Cut-Off

Current

Colllector-Emitter

Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

I

EBO

I

CES

V

CE(sat)

V

BE(sat)

V

BE(on)

0.75

0.85

1.7

1.5

0.1

10

1.1

1.2

1.9

1.7

3-206

0.75

0.85

1.7

1.5

ZTX600

MIN. TYP.

Collector-Base

V

(BR)CBO

Breakdown Voltage

Collector-Emitter

V

(BR)CEO

Breakdown Voltage

180

160

10

ZTX601

MAX. MIN. TYP.

MAX.

V

I

C

=100

µ

A

I

C

=10mA*

I

E

=100

µ

A

0.01

10

0.1

UNIT CONDITIONS.

0.8 R

5

= 1MΩ

R

5

=

∞

0.6

0.4

DC Conditions

0.2

Maximum Power Dissipation (W)

0

100

200

1

10

V

CE

- Collector-Emitter Voltage (Volts)

µ

A

µ

A

µ

A

µ

A

µ

A

V

CB

=140V

V

CB

=160V

V

CB

=140V,

T

=

=100°C

V

CB

=160V,

T

=

=100°C

V

EB

=8V

10

1.1

1.2

1.9

1.7

µ

A

µ

A

Voltage Derating Graph

The maximum permissible operational temperature can be obtained from this graph using the

following equation

+25°

C

V

CES

=140V

V

CES

=160V

V

I

C

=0.5A, I

B

=5mA*

I

C

=1A, I

B

=10mA*

I

C

=1A, I

B

=10mA*

IC=1A, V

CE

=5V*

T

amb

(

max

)

=

Power

(max ) −

Power

(

act)

0.0057

T

amb(max)

= Maximum operating ambient temperature

Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V

CE

and source resistance (R

S

)

Power(actual)= Actual power dissipation in users circuit

3-207

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