ZTX552 datasheet, PDF - EEWORLD Datasheet

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ZTX552: DescriptionRF SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size49KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZTX552 Overview

RF SMALL SIGNAL TRANSISTOR

ZTX552 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-based maximum capacity	12 pF
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power consumption environment	2 W
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
VCEsat-Max	0.25 V

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ZTX754

ZTX755

PNP SILICON PLANAR

MEDIUM POWER TRANSISTORS

I

B1

=I

B2

=I

C

/10

V

CE

=10V

ZTX754

ZTX755

TYPICAL CHARACTERISTICS

ts

0.8

td

ts

µs

td

tr

tf

µs

2.0 0.5

ISSUE 2 JULY 94

FEATURES

* 150 Volt V

CEO

* 1 Amp continuous current

* Low saturation voltage

* P

tot

= 1 Watt

C

B

E

0.6

0.4

I

C

/I

B

=10

tf

0.4

tr

0.3

1.0

0.2

V

CE(sat)

- (Volts)

Switching time

0.2

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

0.1

1

E-Line

TO92 Compatible

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

ZTX754

-125

-5

-2

-1

1

-55 to +200

ZTX755

-150

UNIT

V

A

W

°C

0.1

0

0.001

0.01

0.1

1

0

0.01

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

I

C

-

Collector Current (Amps)

I

C

-

Collector Current (Amps)

V

CE(sat)

v I

C

Switching Speeds

100

I

C

/I

B

=10

1.0

80

V

CE

=5V

0.8

60

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL

ZTX754

MIN.

Collector-Base

Breakdown Voltage

0.001

0.01

0.1

1

ZTX755

MAX.

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

-125

-5

-100

MIN.

-150

-5

MAX.

UNIT

CONDITIONS.

40

0.6

h

FE

- Normalised Gain (%)

V

BE(sat)

- (Volts)

20

0.4

V

I

C

=-100

µ

A, I

E

=0

I

C

=-10mA, I

B

=0*

I

E

=-100

µ

A, I

C

=0

0.001

0.01

0.1

1

10

0.2

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter Turn-On

Voltage

I

C

-

Collector Current (Amps)

I

C

-

Collector Current (Amps)

h

FE

v I

C

Single Pulse Test at T

amb

=25°C

V

BE(sat)

v I

C

10

-100

nA

V

CB

=-100V, I

E

=0

V

CB

=-125V, I

E

=0

V

EB

=-3V, I

C

=0

1.2

V

CE

=5V

1.0

1

-0.5

-1.1

-1.0

-0.5

-1.1

-1.0

V

I

C

=-500mA, I

B

=-50mA*

I

C

=-1A, I

B

=-200mA*

I

C

=-500mA, I

B

=-50mA*

IC=-500mA, V

CE

=-5V*

V

BE

- (Volts)

0.8

I

C

- Collector Current (Amps)

0.6

0.1

D.C.

1s

100ms

10ms

1.0ms

300µs

0.4

ZTX754

0.0001

ZTX755

0.001

10

0.01

0.1

1

Static Forward

h

FE

Current Transfer Ratio

100

1000

0.01

1

50

20

Transition Frequency

Output Capacitance

f

T

C

obo

30

20

3-263

50

20

30

20

MHz

pF

I

C

=-10mA, V

CE

=-5V

I

C

=-500mA, V

CE

=-5V*

I

C

=-1A, V

CE

=-5V*

I

C

=-10mA, V

CE

=-20V

f=20MHz

V

CB

=-20V, f=1MHz

I

C

-

Collector Current (Amps)

V

CE

-

Collector Voltage (Volts)

V

BE(on)

v I

C

Safe Operating Area

3-264

ZTX552 Related Products

	ZTX552	ZTX754	ZTX553
Description	RF SMALL SIGNAL TRANSISTOR	RF SMALL SIGNAL TRANSISTOR	RF SMALL SIGNAL TRANSISTOR
Is it Rohs certified?	incompatible	incompatible	conform to
Maker	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Reach Compliance Code	unknow	unknow	not_compliant
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A	1 A
Collector-based maximum capacity	12 pF	20 pF	12 pF
Collector-emitter maximum voltage	80 V	125 V	100 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	50	10
JEDEC-95 code	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3
JESD-609 code	e0	e0	e3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP
Maximum power dissipation(Abs)	1 W	1 W	1 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	30 MHz	150 MHz
VCEsat-Max	0.25 V	0.5 V	0.25 V
Maximum power consumption environment	2 W	-	2 W

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