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ZTX553

Description
RF SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size49KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZTX553 Overview

RF SMALL SIGNAL TRANSISTOR

ZTX553 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionTO-92 COMPATIBLE, E-LINE PACKAGE-3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-based maximum capacity12 pF
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power consumption environment2 W
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.25 V
ZTX754
ZTX755
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
I
B1
=I
B2
=I
C
/10
V
CE
=10V
ZTX754
ZTX755
TYPICAL CHARACTERISTICS
ts
0.8
td
ts
µs
td
tr
tf
µs
2.0 0.5
ISSUE 2 – JULY 94
FEATURES
* 150 Volt V
CEO
* 1 Amp continuous current
* Low saturation voltage
* P
tot
= 1 Watt
C
B
E
0.6
0.4
I
C
/I
B
=10
tf
0.4
tr
0.3
1.0
0.2
V
CE(sat)
- (Volts)
Switching time
0.2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
0.1
1
E-Line
TO92 Compatible
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX754
-125
-125
-5
-2
-1
1
-55 to +200
ZTX755
-150
-150
UNIT
V
V
V
A
A
W
°C
0.1
0
0.001
0.01
0.1
1
0
0.01
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
Switching Speeds
100
I
C
/I
B
=10
1.0
80
V
CE
=5V
0.8
60
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX754
MIN.
Collector-Base
Breakdown Voltage
0.001
0.01
0.1
1
ZTX755
MAX.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
-125
-125
-5
-100
MIN.
-150
-150
-5
MAX.
UNIT
CONDITIONS.
40
0.6
h
FE
- Normalised Gain (%)
V
BE(sat)
- (Volts)
20
0.4
V
V
V
I
C
=-100
µ
A, I
E
=0
I
C
=-10mA, I
B
=0*
I
E
=-100
µ
A, I
C
=0
0.001
0.01
0.1
1
10
0.2
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
Single Pulse Test at T
amb
=25°C
V
BE(sat)
v I
C
10
-100
-100
-100
nA
nA
nA
V
CB
=-100V, I
E
=0
V
CB
=-125V, I
E
=0
V
EB
=-3V, I
C
=0
1.2
V
CE
=5V
1.0
1
-0.5
-0.5
-1.1
-1.0
-0.5
-0.5
-1.1
-1.0
V
V
V
V
I
C
=-500mA, I
B
=-50mA*
I
C
=-1A, I
B
=-200mA*
I
C
=-500mA, I
B
=-50mA*
IC=-500mA, V
CE
=-5V*
V
BE
- (Volts)
0.8
I
C
- Collector Current (Amps)
0.6
0.1
D.C.
1s
100ms
10ms
1.0ms
300µs
0.4
ZTX754
0.0001
ZTX755
0.001
10
0.01
0.1
1
Static Forward
h
FE
Current Transfer Ratio
100
1000
0.01
1
50
50
20
Transition Frequency
Output Capacitance
f
T
C
obo
30
20
3-263
50
50
20
30
20
MHz
pF
I
C
=-10mA, V
CE
=-5V
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-10mA, V
CE
=-20V
f=20MHz
V
CB
=-20V, f=1MHz
I
C
-
Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
V
BE(on)
v I
C
Safe Operating Area
3-264

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Description RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR
Is it Rohs certified? conform to incompatible incompatible
Maker Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors
package instruction TO-92 COMPATIBLE, E-LINE PACKAGE-3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3
Reach Compliance Code not_compliant unknow unknow
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A
Collector-based maximum capacity 12 pF 20 pF 12 pF
Collector-emitter maximum voltage 100 V 125 V 80 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 10 50 10
JEDEC-95 code TO-92 TO-92 TO-92
JESD-30 code O-PBCY-W3 O-PBCY-W3 O-PBCY-W3
JESD-609 code e3 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 200 °C 200 °C 200 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 1 W 1 W 1 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 30 MHz 150 MHz
VCEsat-Max 0.25 V 0.5 V 0.25 V
Maximum power consumption environment 2 W - 2 W
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