ZTX549 datasheet, PDF - EEWORLD Datasheet

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ZTX549: DescriptionRF SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size51KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZTX549 Overview

RF SMALL SIGNAL TRANSISTOR

ZTX549 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	IN-LINE, R-PSIP-W3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-based maximum capacity	25 pF
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.5 V

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ZTX549

ZTX549A

PNP SILICON PLANAR

MEDIUM POWER TRANSISTORS

UNIT

MHz

pF

ns

I

C

=-500mA, V

CC

=-10V

I

B1

=I

B2

=-50mA

V

CB

=-10V, f=1MHz

I

C

=-100mA, V

CE

=-5V

f=100MHz

CONDITIONS.

ZTX549

ZTX549A

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

Transition Frequency

f

T

100

ISSUE 1 MARCH 94

FEATURES

* 30 Volt V

CEO

* 1 Amp continuous current

* P

tot

= 1 Watt

C

B

Output Capacitance

C

obo

25

Switching Times

t

on

300

E

t

off

50

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation: at T

amb

=25°C

derate above 25°C

Operating and Storage Temperature Range

PARAMETER

Collector-Base Breakdown

Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

ZTX549A

Base-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

ZTX549

ZTX549A

V

BE(sat)

V

BE(on)

h

FE

70

80

40

100

150

-0.9

-0.85

200

130

80

160

200

3-191

300

500

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

-0.25

-0.50

MIN.

-35

-30

-5

-0.1

-10

-0.1

-0.50

-0.75

-0.30

-1.25

-1

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

TYP.

MAX.

SYMBOL

-35

-30

-5

-2

-1

1

5.7

E-Line

TO92 Compatible

VALUE

UNIT

V

A

W

mW/ °C

-55 to +200

UNIT

V

µ

A

µ

A

µ

A

°C

CONDITIONS.

I

C

=-100

µ

A

I

C

=-10mA

I

E

=-100

µ

A

V

CB

=-30V

V

CB

=-30V, T

amb

=100°C

V

EB

=-4V

V

I

C

=-1A, I

B

=-100mA*

I

C

=-2A, I

B

=-200mA*

I

C

=-100mA, I

B

=-1mA*

I

C

=-1A, I

B

=-100mA*

IC=-1A, V

CE

=-2V*

I

C

=-50mA, V

CE

=-2V*

I

C

=-1A, V

CE

=-2V*

I

C

=-2A, V

CE

=-2V*

I

C

=-500mA, V

CE

=-2V*

I

C

=-500mA, V

CE

=-2V*

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

3-192

ZTX549 Related Products

	ZTX549	ZTX549A
Description	RF SMALL SIGNAL TRANSISTOR	RF SMALL SIGNAL TRANSISTOR
Is it Rohs certified?	conform to	conform to
Maker	Zetex Semiconductors	Zetex Semiconductors
package instruction	IN-LINE, R-PSIP-W3	E-LINE PACKAGE-3
Reach Compliance Code	not_compliant	_compli
ECCN code	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A
Collector-emitter maximum voltage	30 V	30 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40
JESD-30 code	R-PSIP-W3	R-PSIP-W3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	200 °C	200 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	WIRE	WIRE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz
VCEsat-Max	0.5 V	0.5 V

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