NPN LOW NOISE
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Zetex Semiconductors |
| package instruction | IN-LINE, R-PSIP-W3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LOW NOISE |
| Maximum collector current (IC) | 0.2 A |
| Collector-emitter maximum voltage | 30 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 250 |
| JESD-30 code | R-PSIP-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 200 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | 235 |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.35 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 150 MHz |
| VCEsat-Max | 0.25 V |
| ZTX384 | ZTX109 | ZTX383 | ZTX382 | ZTX331 | ZTX330 | ZTX239 | |
|---|---|---|---|---|---|---|---|
| Description | NPN LOW NOISE | NPN LOW NOISE | NPN LOW NOISE | NPN LOW NOISE | NPN LOW NOISE | NPN LOW NOISE | NPN LOW NOISE |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors |
| package instruction | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 |
| Reach Compliance Code | unknown | unknow | unknown | unknown | unknown | unknown | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
| Maximum collector current (IC) | 0.2 A | 0.1 A | 0.2 A | 0.2 A | 0.5 A | 0.5 A | 0.2 A |
| Collector-emitter maximum voltage | 30 V | 30 V | 30 V | 45 V | 45 V | 30 V | 30 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 250 | 240 | 100 | 100 | 40 | 100 | 180 |
| JESD-30 code | R-PSIP-W3 | R-PSIP-W3 | R-PSIP-W3 | R-PSIP-W3 | R-PSIP-W3 | R-PSIP-W3 | R-PSIP-W3 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Peak Reflow Temperature (Celsius) | 235 | 235 | 235 | 235 | 235 | 235 | NOT SPECIFIED |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 0.35 W | 0.3 W | 0.35 W | 0.35 W | 0.3 W | 0.3 W | 0.35 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 150 MHz | 350 MHz | 150 MHz | 150 MHz | 30 MHz | 30 MHz | 150 MHz |
| VCEsat-Max | 0.25 V | - | 0.25 V | 0.25 V | 0.7 V | 0.7 V | 0.25 V |
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