ZTX382 datasheet, PDF - EEWORLD Datasheet

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ZTX382: DescriptionNPN LOW NOISE; CategoryDiscrete semiconductor The transistor; File Size166KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZTX382 Overview

NPN LOW NOISE

ZTX382 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	IN-LINE, R-PSIP-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PSIP-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	235
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
VCEsat-Max	0.25 V

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ZTX382 Related Products

	ZTX382	ZTX109	ZTX384	ZTX383	ZTX331	ZTX330	ZTX239
Description	NPN LOW NOISE	NPN LOW NOISE	NPN LOW NOISE	NPN LOW NOISE	NPN LOW NOISE	NPN LOW NOISE	NPN LOW NOISE
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors
package instruction	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3
Reach Compliance Code	unknown	unknow	unknown	unknown	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.2 A	0.1 A	0.2 A	0.2 A	0.5 A	0.5 A	0.2 A
Collector-emitter maximum voltage	45 V	30 V	30 V	30 V	45 V	30 V	30 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	240	250	100	40	100	180
JESD-30 code	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3
JESD-609 code	e0	e0	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	235	235	235	235	235	235	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.35 W	0.3 W	0.35 W	0.35 W	0.3 W	0.3 W	0.35 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	350 MHz	150 MHz	150 MHz	30 MHz	30 MHz	150 MHz
VCEsat-Max	0.25 V	-	0.25 V	0.25 V	0.7 V	0.7 V	0.25 V

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