|
ZTX303 |
ZTX107 |
ZTX108 |
ZTX304 |
ZTX302 |
ZTX238 |
ZTX301 |
ZTX237 |
| Description |
RF SMALL SIGNAL TRANSISTOR |
RF SMALL SIGNAL TRANSISTOR |
RF SMALL SIGNAL TRANSISTOR |
RF SMALL SIGNAL TRANSISTOR |
RF SMALL SIGNAL TRANSISTOR |
RF SMALL SIGNAL TRANSISTOR |
RF SMALL SIGNAL TRANSISTOR |
RF SMALL SIGNAL TRANSISTOR |
| Is it Rohs certified? |
incompatible |
incompatible |
incompatible |
incompatible |
- |
incompatible |
incompatible |
incompatible |
| Maker |
Zetex Semiconductors |
Zetex Semiconductors |
Zetex Semiconductors |
Zetex Semiconductors |
- |
Zetex Semiconductors |
Zetex Semiconductors |
Zetex Semiconductors |
| package instruction |
IN-LINE, R-PSIP-W3 |
IN-LINE, R-PSIP-W3 |
IN-LINE, R-PSIP-W3 |
IN-LINE, R-PSIP-W3 |
- |
IN-LINE, R-PSIP-W3 |
IN-LINE, R-PSIP-W3 |
IN-LINE, R-PSIP-W3 |
| Reach Compliance Code |
unknow |
unknow |
unknow |
unknow |
- |
unknown |
unknow |
unknow |
| ECCN code |
EAR99 |
EAR99 |
EAR99 |
EAR99 |
- |
EAR99 |
EAR99 |
EAR99 |
| Maximum collector current (IC) |
0.5 A |
0.1 A |
0.1 A |
0.5 A |
- |
0.2 A |
0.5 A |
0.2 A |
| Collector-emitter maximum voltage |
45 V |
50 V |
30 V |
70 V |
- |
30 V |
35 V |
45 V |
| Configuration |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
- |
SINGLE |
SINGLE |
SINGLE |
| Minimum DC current gain (hFE) |
50 |
125 |
125 |
50 |
- |
120 |
50 |
120 |
| JESD-30 code |
R-PSIP-W3 |
R-PSIP-W3 |
R-PSIP-W3 |
R-PSIP-W3 |
- |
R-PSIP-W3 |
R-PSIP-W3 |
R-PSIP-W3 |
| JESD-609 code |
e0 |
e0 |
e0 |
e0 |
- |
e0 |
e0 |
e0 |
| Number of components |
1 |
1 |
1 |
1 |
- |
1 |
1 |
1 |
| Number of terminals |
3 |
3 |
3 |
3 |
- |
3 |
3 |
3 |
| Maximum operating temperature |
200 °C |
200 °C |
200 °C |
200 °C |
- |
200 °C |
200 °C |
200 °C |
| Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
- |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
| Package shape |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
- |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
| Package form |
IN-LINE |
IN-LINE |
IN-LINE |
IN-LINE |
- |
IN-LINE |
IN-LINE |
IN-LINE |
| Peak Reflow Temperature (Celsius) |
235 |
235 |
235 |
235 |
- |
235 |
235 |
235 |
| Polarity/channel type |
NPN |
NPN |
NPN |
NPN |
- |
NPN |
NPN |
NPN |
| Maximum power dissipation(Abs) |
0.3 W |
0.3 W |
0.3 W |
0.3 W |
- |
0.35 W |
0.3 W |
0.3 W |
| Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
- |
Not Qualified |
Not Qualified |
Not Qualified |
| surface mount |
NO |
NO |
NO |
NO |
- |
NO |
NO |
NO |
| Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
- |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
| Terminal form |
WIRE |
WIRE |
WIRE |
WIRE |
- |
WIRE |
WIRE |
WIRE |
| Terminal location |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
- |
SINGLE |
SINGLE |
SINGLE |
| Maximum time at peak reflow temperature |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
- |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
| transistor applications |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
- |
SWITCHING |
SWITCHING |
SWITCHING |
| Transistor component materials |
SILICON |
SILICON |
SILICON |
SILICON |
- |
SILICON |
SILICON |
SILICON |
| Nominal transition frequency (fT) |
150 MHz |
350 MHz |
350 MHz |
150 MHz |
- |
150 MHz |
150 MHz |
150 MHz |
| VCEsat-Max |
0.35 V |
- |
- |
0.35 V |
- |
0.25 V |
0.25 V |
0.25 V |